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APT12060LVRG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 1200V 20A TO264. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for APT12060LVRG
- Description：MOSFET N-CH 1200V 20A TO264
- Series：POWER MOS V®
- Mfr：Microchip Technology
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：1200 V
- Current - Continuous Drain (Id) @ 25°C：20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：600mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：4V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs：650 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：9500 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：625W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-264 (L)
- Package / Case：TO-264-3, TO-264AA
Single FETs, MOSFETs datasheet and documents for APT12060LVRG
Single FETs, MOSFETs Overview
The APT12060LVRG is a single N-channel MOSFET manufactured by Microchip Technology, utilizing silicon technology in a TO-264-3 through-hole package. It features a drain-source breakdown voltage (Vds) of 1200 V and a continuous drain current (Id) of 20 A at case temperature. The device has an on-state resistance (Rds(on)) of 600 mOhms, a gate charge (Qg) of 650 nC, and a maximum power dissipation (Pd) of 625 W at case temperature. It operates within a temperature range of -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- High-voltage capability with 1200 V drain-source breakdown rating for robust switching applications.
- Low on-state resistance of 600 mOhms to minimize conduction losses.
- Through-hole TO-264-3 packaging designed for high-power thermal management.
Single FETs, MOSFETs Applications
- Industrial motor drives
- Power supply circuits
- Inverter systems
Single FETs, MOSFETs Procurement Notes
Verify the specific datasheet revision DS00003052 when sourcing components to ensure alignment with current manufacturing specifications. Confirm that the TO-264-3 package dimensions match the target PCB footprint requirements. Ensure that thermal interface materials are compatible with the specified maximum junction temperature limits during assembly.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring high voltage isolation and moderate current handling in through-hole configurations. Compare the 600 mOhm Rds(on) against alternative packages if space constraints allow surface-mount solutions. Evaluate the 650 nC gate charge against driver capabilities to ensure adequate switching speed without excessive drive current demands.
Single FETs, MOSFETs Part Context
This part belongs to the Microchip APT series of high-voltage MOSFETs, which are engineered for industrial and consumer power applications. The series utilizes advanced trench gate technology to achieve low on-resistance and fast switching characteristics. The TO-264 package provides a reliable mechanical connection and efficient heat dissipation path for high-power modules.
Single FETs, MOSFETs Replacement Considerations
The APT10050LVRG is a related variant within the same product family, offering similar packaging but different electrical ratings. Verify compatibility before substitution as voltage and current specifications differ between these models.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
