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APT12080JVR is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microsemi Corporation. Its product description is MOSFET N-CH 1200V 15A ISOTOP. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for APT12080JVR
- Description：MOSFET N-CH 1200V 15A ISOTOP
- Series：POWER MOS V®
- Mfr：Microsemi Corporation
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：1200 V
- Current - Continuous Drain (Id) @ 25°C：15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：800mOhm @ 7.5A, 10V
- Vgs(th) (Max) @ Id：4V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs：485 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：7800 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：450W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Chassis Mount
- Supplier Device Package：ISOTOP®
- Package / Case：SOT-227-4, miniBLOC
Single FETs, MOSFETs datasheet and documents for APT12080JVR
Single FETs, MOSFETs Overview
The APT12080JVR is a Power MOS V® FREDFET, representing a generation of high-voltage N-channel enhancement mode power MOSFETs. This component utilizes advanced technology to minimize the JFET effect and reduce on-resistance while achieving faster switching speeds through an optimized gate layout. It is designed for applications requiring efficient power conversion with low leakage current and avalanche energy rating capabilities.
Single FETs, MOSFETs Feature Summary
- Minimizes JFET effect to increase packing density
- Optimized gate layout for faster switching speeds
- Avalanche energy rated for rugged operation
Single FETs, MOSFETs Applications
- General purpose inverters
- Motor control systems
- Induction heating (IH)
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix against official Microsemi documentation to confirm exact electrical characteristics and package variations. Ensure compatibility with existing thermal management designs due to the discrete module form factor. Cross-reference datasheet revisions to confirm RoHS compliance status and pinout definitions before finalizing procurement specifications.
Single FETs, MOSFETs Selection Notes
Select this component when low on-resistance and fast switching are critical for efficiency in high-voltage environments. The Power MOS V® technology offers superior performance compared to standard MOSFETs by reducing parasitic effects. Consider the thermal requirements associated with the TO-264 package for proper heat dissipation in high-current applications.
Single FETs, MOSFETs Part Context
This device belongs to the Microsemi (formerly Advanced Power Technology) Power MOS V® family. It is categorized as a FREDFET, combining MOSFET input characteristics with fast recovery diode output properties. The product line focuses on high-voltage power switching solutions for industrial and automotive electronics.
Single FETs, MOSFETs Replacement Considerations
Consult official Microsemi substitution guides for direct replacements. Verify that alternative components match the 1200V rating and similar on-resistance values. Ensure pin compatibility and thermal resistance specifications align with the original design constraints.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
