APT13003EU-G1

Single Bipolar Transistors Overview

The APT13003EU-G1 is a silicon NPN power transistor manufactured by Diodes Incorporated. It features a maximum collector-emitter voltage of 465V and a continuous collector current rating of 1.5A. The device supports a maximum power dissipation of 20W and operates within a junction temperature range up to 150°C. It offers a minimum DC current gain (hFE) of 5 and a transition frequency of 4MHz. Available in surface-mount TO-92 packaging, it is designed for high-voltage switching applications.

Single Bipolar Transistors Feature Summary

• High collector-emitter voltage capability for robust high-voltage operation
• Optimized for high switching speed performance
• Cost-effective design utilizing standard TO-92 surface-mount packaging

Single Bipolar Transistors Applications

• Battery chargers for mobile phones
• Power supplies for DVD players
• Set-top box (STB) power systems

Single Bipolar Transistors Procurement Notes

Verify the specific suffix G1 against official Diodes Incorporated documentation to confirm RoHS compliance and lead-free status. Confirm the package type matches the required surface-mount configuration. Check for any Product Change Notices or End-of-Life notifications that may affect long-term availability or material composition changes.

Single Bipolar Transistors Selection Notes

Select this component when a single NPN transistor with 465V breakdown voltage and 1.5A current handling is required in a compact surface-mount form factor. Ensure the application circuit accounts for the 20W power dissipation limit and thermal management needs. Verify that the 4MHz transition frequency meets the switching requirements of the target design.

Single Bipolar Transistors Part Context

This part belongs to the APT13003 series of high-voltage bipolar junction transistors from Diodes Incorporated. The series includes variants such as APT13003HU-G1 and APT13003EZTR-G1, which share similar electrical characteristics but differ in packaging options like bulk or ammo pack configurations. These components are engineered for efficient power management in consumer electronics.

Single Bipolar Transistors Replacement Considerations

Cross-reference with APT13003E_11 or APT13003EZ-G1 for equivalent electrical specifications. Verify pinout compatibility and thermal resistance values before substitution. Consult manufacturer datasheets to ensure functional equivalence in high-voltage switching environments.