APT13003LZTR-G1

Single Bipolar Transistors Overview

The APT13003LZTR-G1 is a silicon NPN high-voltage bipolar junction transistor manufactured by Diodes Incorporated. It features a TO-92-3 through-hole package with three pins. Key electrical parameters include a maximum collector-emitter voltage (Vceo) of 450 V, a collector-base voltage (Vcbo) of 700 V, and a maximum DC collector current of 800 mA. The device has a maximum power dissipation of 1.1 W and operates at temperatures up to +150 °C.

Single Bipolar Transistors Feature Summary

• High-voltage NPN configuration designed for robust switching applications
• Through-hole TO-92-3 package suitable for standard PCB mounting
• Silicon technology ensuring stable performance under thermal stress

Single Bipolar Transistors Applications

• Flyback transformer drivers in offline power supplies
• High-voltage switching circuits in consumer electronics
• General-purpose high-voltage amplification stages

Single Bipolar Transistors Procurement Notes

Verify component authenticity through authorized Diodes Incorporated channels due to potential counterfeits. Confirm RoHS compliance status via official documentation before integration. Check for end-of-life notifications as availability may be restricted. Ensure storage conditions maintain device integrity prior to assembly.

Single Bipolar Transistors Selection Notes

Select this component when a high-voltage NPN switch is required in a low-power through-hole design. Compare Vceo ratings against circuit peak voltages to ensure safety margins. Evaluate thermal management requirements given the 1.1 W dissipation limit in the TO-92 package. Consider pin compatibility with existing board layouts.

Single Bipolar Transistors Part Context

This part belongs to the APT1300 series of high-voltage transistors from Diodes Incorporated. The series offers various voltage and current ratings across different packages. The LZTR suffix indicates tape-and-reel packaging within the TO-92 form factor, distinguishing it from bulk or other variant configurations in the same family.

Single Bipolar Transistors Replacement Considerations

Direct substitutes must match the 450V Vceo, 800mA Ic, and TO-92-3 package specifications. Verify pinout alignment and thermal characteristics before substitution. Cross-reference datasheets for equivalent parts from other manufacturers offering similar high-voltage BJT performance.