Single Bipolar Transistors APT13005DI-G1 product image

APT13005DI-G1

$0.18
  • Description:TRANS NPN 450V 4A TO-251
  • Series:-

SKU:e21da4cb7a0a Category: Brand:

  
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APT13005DI-G1 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is TRANS NPN 450V 4A TO-251. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for APT13005DI-G1

  • Description:TRANS NPN 450V 4A TO-251
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):4:00 AM
  • Voltage - Collector Emitter Breakdown (Max):450 V
  • Vce Saturation (Max) @ Ib, Ic:900mV @ 1A, 4A
  • Current - Collector Cutoff (Max):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:8 @ 2A, 5V
  • Power - Max:25 W
  • Frequency - Transition:4MHz
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-251-3 Short Leads, IPAK, TO-251AA
  • Supplier Device Package:TO-251
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for APT13005DI-G1

APT13005DI-G1

Single Bipolar Transistors Overview

The APT13005DI-G1 is a discontinued NPN high voltage power transistor manufactured by Diodes Incorporated. It features a collector-emitter breakdown voltage (BVCEO) exceeding 450V and a collector-emitter saturation voltage (BVCES) greater than 700V. The device supports a maximum continuous collector current of 4A with an integrated anti-parallel diode for free-wheeling applications. Key electrical parameters include a transition frequency (fT) of 4MHz, a DC current gain (hFE) ranging from 8 to 35 depending on operating conditions, and a maximum power dissipation of 28W at 25°C case temperature. It operates within a junction temperature range of -65°C to +150°C.

Single Bipolar Transistors Feature Summary

  • Integrated anti-parallel diode functions as a free-wheeling diode
  • Anti-saturation feature prevents deep base drive saturation
  • High collector-emitter breakdown voltage exceeding 700V in saturated state

Single Bipolar Transistors Applications

  • Low power AC-DC Switch Mode Power Supplies (SMPS)
  • Battery chargers for mobile phones, tablets, and smartphones
  • Power supplies for DVD players and Set-Top Boxes (STB)
  • LED lighting systems

Single Bipolar Transistors Procurement Notes

This component is officially marked as obsolete and discontinued by the manufacturer. Verify availability through authorized distributors or secondary markets. Confirm that any sourced units are genuine and match the original datasheet specifications. Check for updated RoHS compliance status if required by your specific regulatory environment.

Single Bipolar Transistors Selection Notes

Select this component only if its specific high-voltage characteristics and integrated anti-parallel diode align with the circuit requirements. Consider the thermal resistance values when designing heat sinks. Evaluate alternative components if long-term supply stability is critical for the product lifecycle.

Single Bipolar Transistors Part Context

The APT13005DI-G1 belongs to the APT13005D series of high voltage NPN power transistors. It is designed for general-purpose switching applications requiring robust performance under high voltage stress. The device utilizes a TO-220 package variant for through-hole mounting.

Single Bipolar Transistors Replacement Considerations

APT13005DTF-G1

Single Bipolar Transistors FAQ

What is the purpose of the integrated anti-parallel diode?

It acts as a free-wheeling diode, providing a path for inductive current when the transistor switches off.

How does the anti-saturation feature benefit the circuit?

It prevents the transistor from entering deep saturation, which reduces storage time and improves switching speed.

What is the maximum collector-emitter voltage in the saturated state?

The collector-emitter saturation voltage (BVCES) exceeds 700V.

APT13005DI-G1APT13005DI-G1
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