APT13005SI-G1

Single Bipolar Transistors Overview

The APT13005SI-G1 is a discontinued NPN high voltage power transistor manufactured by Diodes Incorporated. It features a collector-emitter breakdown voltage (BVCEO) of 450V and a collector-emitter saturation voltage (BVCES) exceeding 700V. The device supports a continuous collector current of 3.2A and operates within a junction temperature range of -65°C to +150°C. Packaged in the TO-251 surface-mount format, it provides a maximum power dissipation of 25W at 25°C case temperature. Electrical characteristics include a transition frequency of 4MHz and an output capacitance of 35pF.

Single Bipolar Transistors Feature Summary

• High voltage capability with BVCEO greater than 450V and BVCES exceeding 700V for robust operation
• Designed for fast switching applications utilizing cellular emitter structure technology
• Compliant with RoHS directives and manufactured as a halogen-free green device

Single Bipolar Transistors Applications

• Low power AC-DC switch-mode power supplies
• Battery chargers for mobile phones, tablets, and smartphones
• Power supplies for DVD players and set-top boxes
• LED lighting systems

Single Bipolar Transistors Procurement Notes

This component is officially marked as obsolete and discontinued by Diodes Incorporated. No alternate part numbers are provided in the datasheet. Verification of availability requires checking authorized distributors for remaining stock or evaluating alternative components from other manufacturers that match the required electrical specifications and package dimensions.

Single Bipolar Transistors Selection Notes

Selection should focus on verifying the specific requirements for high-voltage switching performance and thermal management capabilities. The TO-251 package offers a compact footprint suitable for surface-mount designs requiring efficient heat dissipation. Designers must ensure that the operating conditions remain within the absolute maximum ratings defined in the official documentation to maintain reliability.

Single Bipolar Transistors Part Context

The APT13005SI-G1 belongs to the APT13005S series of NPN high voltage power transistors produced by Diodes Incorporated. This series utilizes multi-epitaxial planar technology to achieve high switching speeds and wide reverse-bias safe operating area characteristics. The product line was designed to address the needs of cost-effective switch-mode power supply applications in consumer electronics.

Single Bipolar Transistors Replacement Considerations

The official datasheet explicitly states there is no alternate part number available from Diodes Incorporated. Engineers seeking a replacement must identify third-party components that replicate the 450V/3.2A rating and TO-251 package form factor while ensuring compatibility with the target application's switching speed and thermal constraints.