APT13F120B

Single FETs, MOSFETs Overview

The APT13F120B is a single N-Channel Power MOSFET from Microchip Technology, utilizing the Power MOS 8 technology. It features a 1200 V drain-source breakdown voltage and a continuous drain current of 14 A at case temperature. The device exhibits a maximum on-resistance of 910 mOhms and operates within a junction temperature range of -55°C to +150°C. Packaged in a TO-247-3 through-hole housing, it supports up to 625 W power dissipation. Key switching parameters include an 8 ns rise time, 24 ns fall time, and a minimum forward transconductance of 15 S.

Single FETs, MOSFETs Feature Summary

• High-voltage capability with 1200 V breakdown rating for robust operation in demanding environments
• Advanced Power MOS 8 technology designed for improved switching performance and efficiency
• Low on-resistance characteristic to minimize conduction losses during operation

Single FETs, MOSFETs Applications

• High-frequency switch-mode power supplies
• Motor control circuits requiring high voltage isolation
• Industrial inverters and converters

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision and ordering suffixes directly with Microchip Technology or authorized distributors. Confirm that the TO-247-3 package dimensions match your PCB footprint requirements. Ensure thermal management solutions are adequate for the specified 625 W dissipation limit under your operating conditions. Cross-reference part numbers to distinguish between similar variants in the APT series.

Single FETs, MOSFETs Selection Notes

Select this component when applications require high voltage blocking capabilities combined with moderate current handling. The TO-247-3 package facilitates efficient heat sinking for high-power density designs. Consider the 15 S transconductance for drive circuit design to ensure fast switching transitions. Evaluate thermal resistance parameters against your system's cooling infrastructure to maintain junction temperatures within safe limits.

Single FETs, MOSFETs Part Context

This device belongs to the APT series of discrete power semiconductors manufactured by Microchip Technology. The series utilizes silicon-based MOSFET technology optimized for high-voltage applications. The APT13F120B represents a specific configuration within this lineup, offering distinct electrical characteristics tailored for industrial and commercial power conversion systems.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution guides for compatible alternatives. Verify pinout compatibility and thermal performance metrics before integrating substitute components.