APT13F120S

Single FETs, MOSFETs Overview

The APT13F120S is an N-Channel Silicon MOSFET from Microchip Technology, housed in a surface-mount D3PAK package with two tabs. It features a drain-source voltage rating of 1200V and a continuous drain current of 14A at case temperature. The device supports a maximum power dissipation of 625W under specified thermal conditions. Key electrical characteristics include a rise time of 15 ns and a fall time of 24 ns. The component operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• High-voltage N-Channel silicon construction for robust power switching
• Surface-mount D3PAK packaging with integrated thermal tab
• Fast switching performance with low rise and fall times
• Enhancement mode operation suitable for high-efficiency circuits

Single FETs, MOSFETs Applications

• High-voltage power switching applications
• Industrial motor control systems
• Power supply designs requiring high blocking voltage

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision and ordering suffixes directly with Microchip Technology or authorized distributors. Confirm that the D3PAK tube packaging matches your assembly requirements. Ensure thermal management solutions are adequate for the 625W dissipation rating under actual operating conditions. Cross-reference pinouts and mechanical dimensions against your PCB layout specifications before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring 1200V blocking capability and moderate current handling in a surface-mount form factor. Consider the thermal resistance of the D3PAK package and the necessity of a heatsink for maintaining junction temperatures below 150°C. Evaluate the 14A current rating against peak load demands to ensure reliable operation without exceeding safe operating area limits.

Single FETs, MOSFETs Part Context

The APT13F120S belongs to Microchip's POWER MOS 8™ family of high-voltage transistors. This series is engineered for demanding power electronics applications where reliability and high voltage tolerance are critical. The component utilizes advanced silicon technology to achieve fast switching speeds while maintaining low on-state resistance characteristics typical of modern power MOSFETs.

Single FETs, MOSFETs Replacement Considerations

Consult official Microchip documentation for confirmed substitute part numbers. Verify compatibility regarding voltage ratings, current capacity, package dimensions, and thermal performance before substituting.