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APT14M100B is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 1000V 14A TO247. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for APT14M100B
- Description：MOSFET N-CH 1000V 14A TO247
- Series：POWER MOS 8™
- Mfr：Microchip Technology
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：1000 V
- Current - Continuous Drain (Id) @ 25°C：14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：900mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id：5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：120 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：3965 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：500W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247 [B]
- Package / Case：TO-247-3
Single FETs, MOSFETs datasheet and documents for APT14M100B
Single FETs, MOSFETs Overview
The APT14M100B is a through-hole N-channel Power MOSFET from the POWER MOS 8 series, manufactured by Microchip Technology. It features a TO-247 [B] package with a maximum drain-source voltage (Vdss) of 1000 V and a continuous drain current (Id) of 14 A at case temperature. The device has a maximum power dissipation of 500 W at case temperature and operates within a junction temperature range of -55°C to 150°C. Key electrical parameters include a maximum on-resistance of 900 mΩ at 7 A and 10 V gate-source voltage, a gate charge of 120 nC at 10 V, and an input capacitance of 3965 pF at 25 V.
Single FETs, MOSFETs Feature Summary
- High-voltage capability with 1000 V breakdown rating for robust high-power switching applications.
- Optimized low on-resistance characteristics within the POWER MOS 8 family for improved efficiency.
- Thermal stability designed for operation up to 150°C junction temperature.
Single FETs, MOSFETs Applications
- High-voltage DC-DC converters
- Induction heating systems
- Motor control circuits
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix and manufacturer documentation to confirm exact electrical tolerances and pinout configurations. Ensure that the procurement source provides official datasheets matching the APT14M100B designation to avoid substitution errors with similar packages or voltage ratings.
Single FETs, MOSFETs Selection Notes
Select this component when a 1000 V rated N-channel MOSFET in a TO-247 package is required for high-voltage applications. Consider the 14 A current rating and 900 mΩ on-resistance limits against thermal management requirements. Compare against other members of the POWER MOS 8 series if different current or resistance specifications are needed.
Single FETs, MOSFETs Part Context
This part belongs to the POWER MOS 8 series, which represents Microchip's advanced planar trench technology for high-voltage MOSFETs. The series focuses on reducing figure-of-merit values to enhance switching performance and conduction efficiency in industrial and consumer power supplies.
Single FETs, MOSFETs Replacement Considerations
Check for direct substitutes within the same POWER MOS 8 family, such as variants with different current ratings or on-resistance values, ensuring identical package compatibility and voltage ratings.
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