APT14M120B

Single FETs, MOSFETs Overview

The APT14M120B is an N-channel power MOSFET from Microchip Technology, housed in a TO-247-3 through-hole package. It features a drain-source voltage (Vdss) of 1200 V and a continuous drain current (Id) of 14 A at case temperature. The device has a maximum power dissipation of 625 W at Tc and operates within a junction temperature range of -55°C to 150°C. Key electrical parameters include a gate threshold voltage (Vgs(th)) of 5 V max at 1 mA Id, a gate charge (Qg) of 120 nC max at 10 V, and an input capacitance (Ciss) of 3965 pF max at 25 V.

Single FETs, MOSFETs Feature Summary

• High-voltage capability with 1200 V drain-source breakdown
• Robust thermal performance supporting 625 W power dissipation
• Designed for reliable operation in demanding environments

Single FETs, MOSFETs Applications

• Industrial motor drives
• Power supply circuits
• Inverter applications

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet version and ordering suffixes directly with Microchip Technology or authorized distributors. Confirm that the TO-247-3 package dimensions and pinout match your PCB footprint requirements. Ensure compliance with RoHS directives if required by your manufacturing standards. Cross-reference part numbers carefully as legacy Microsemi products may have updated designations.

Single FETs, MOSFETs Selection Notes

Select this component when high voltage isolation and moderate current handling are required in a through-hole configuration. Consider the 1200 V rating for safety margins in high-voltage systems. Evaluate the thermal management needs given the 625 W dissipation rating at case temperature. Compare gate charge specifications against driver capabilities to ensure efficient switching performance.

Single FETs, MOSFETs Part Context

This device belongs to the discrete semiconductor module category, specifically single FETs and MOSFETs. It represents a transition from Microsemi to Microchip Technology product lines. The TO-247-3 package is standard for high-power through-hole applications. It serves as a replacement for older Microsemi APT series devices with similar electrical characteristics.

Single FETs, MOSFETs Replacement Considerations

Check for direct replacements within the Microchip APT series. Verify compatibility with existing heatsinking solutions due to identical package constraints. Ensure voltage and current ratings meet or exceed original design specifications.