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APT14M120S is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 1200V 14A D3PAK. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for APT14M120S
- Description：MOSFET N-CH 1200V 14A D3PAK
- Series：POWER MOS 8™
- Mfr：Microchip Technology
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：1200 V
- Current - Continuous Drain (Id) @ 25°C：14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：1.1Ohm @ 7A, 10V
- Vgs(th) (Max) @ Id：5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：145 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：4765 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：625W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：D3PAK
- Package / Case：TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Single FETs, MOSFETs datasheet and documents for APT14M120S
Single FETs, MOSFETs Overview
The APT14M120S is a single N-channel silicon MOSFET manufactured by Microchip Technology. It features a 1200V drain-source breakdown voltage and supports a continuous drain current of 14A. The device is housed in a D3PAK (TO-268) surface-mount package. Key electrical parameters include a power dissipation rating of 625W and an operating temperature range from -55°C to +150°C junction temperature.
Single FETs, MOSFETs Feature Summary
- High-voltage capability with 1200V breakdown rating
- Enhancement mode N-channel operation
- Surface-mount D3PAK packaging for thermal efficiency
Single FETs, MOSFETs Applications
- Industrial motor drives
- Power supply inverters
- High-voltage switching circuits
Single FETs, MOSFETs Procurement Notes
Verify the specific datasheet revision and ordering suffixes to ensure compatibility with design requirements. Confirm RoHS compliance status and manufacturing origin details through official Microchip documentation before finalizing procurement specifications.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring robust high-voltage switching with moderate current handling. Ensure thermal management strategies align with the 625W dissipation rating and TO-268 package constraints. Validate gate drive requirements against the enhancement mode characteristics.
Single FETs, MOSFETs Part Context
This part belongs to Microchip's discrete MOSFET portfolio, specifically designed for power electronics. It utilizes silicon technology and is distinct from the company's module offerings like the APTM series or IGBT modules such as the APTGX series.
Single FETs, MOSFETs Replacement Considerations
Consult official Microchip substitution guides for verified alternatives. Generic cross-references may not match the specific thermal or electrical characteristics required for high-voltage 1200V applications.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
