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APT15F50K is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microsemi Corporation. Its product description is MOSFET N-CH 500V 15A TO220. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for APT15F50K
- Description：MOSFET N-CH 500V 15A TO220
- Series：-
- Mfr：Microsemi Corporation
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：500 V
- Current - Continuous Drain (Id) @ 25°C：15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：390mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id：5V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs：55 nC @ 10 V
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：2250 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：223W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220 [K]
- Package / Case：TO-220-3
Single FETs, MOSFETs datasheet and documents for APT15F50K
Single FETs, MOSFETs Overview
The APT15F50K is a 500V, 15A N-channel FREDFET in a TO-220 package. It features a maximum drain-source on-resistance of 0.39Ω and a reverse recovery time of 190ns at 25°C. The device supports continuous collector currents of 15A at 25°C case temperature and 10A at 100°C. Power dissipation reaches 223W at 25°C with a junction-to-case thermal resistance of 0.56°C/W. It operates within a junction temperature range of -55°C to 150°C.
Single FETs, MOSFETs Feature Summary
- Optimized body diode for high reliability in ZVS phase-shifted bridge circuits through reduced reverse recovery time and soft recovery characteristics.
- Ultra-low reverse transfer capacitance enhances noise immunity and reduces switching loss.
- Poly-silicon gate structure provides intrinsic gate resistance to control di/dt, resulting in low electromagnetic interference.
- Rated for single pulse avalanche energy to withstand transient overvoltage conditions.
Single FETs, MOSFETs Applications
- ZVS phase shifted and other full bridge converters
- Half bridge power supplies
- PFC and boost converter circuits
- Buck converter topologies
- Single and two switch forward converters
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix (K or KF) corresponds to the required TO-220 package variant during procurement. Confirm that the component meets RoHS compliance requirements if mandated by your assembly standards. Ensure the ordering part number matches the exact electrical ratings documented in the official Microsemi datasheet to avoid substitution errors in high-frequency switching applications.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring fast switching with low electromagnetic interference. The optimized body diode makes it suitable for resonant and phase-shifted bridge topologies where reverse recovery performance is critical. Evaluate the thermal management capabilities against the specified junction-to-case thermal resistance to ensure reliable operation under continuous load conditions.
Single FETs, MOSFETs Part Context
This device belongs to the Microsemi Power MOS 8 family of high-speed, high-voltage N-channel switch-mode power MOSFETs. The FREDFET designation indicates a specific optimization of the internal body diode for hard-switching and resonant applications. It serves as a discrete solution for medium-power conversion stages requiring robust avalanche capability and low gate charge.
Single FETs, MOSFETs Replacement Considerations
The APT15F50KF is the pin-compatible variant with different current and thermal ratings. Verify package dimensions and thermal resistance specifications when substituting between K and KF suffixes to ensure mechanical fit and adequate heat dissipation in the existing design.
Single FETs, MOSFETs FAQ
What is the maximum reverse recovery time for the body diode?
The maximum reverse recovery time is 190ns at a junction temperature of 25°C and 340ns at 125°C under specified test conditions.
How does the gate structure affect switching performance?
The poly-silicon gate structure includes intrinsic gate resistance that helps control di/dt during switching, which results in lower electromagnetic interference and improved reliability.
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