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The APT15GN120BDQ1G is a single IGBT transistor manufactured by Microchip Technology, housed in a TO-247 package. It features a Field Stop technology with a maximum collector-emitter voltage of 1200 V and a continuous collector current rating of 45 A at 25°C. The device has a typical saturation voltage of 2.6 V and a power dissipation capacity of 195 W. It operates within a temperature range of -55°C to +175°C.
Verify the specific suffix Q1G against official Microchip documentation to confirm compliance with RoHS directives and lead-free status. Ensure the TO-247 pinout matches the target PCB layout requirements before procurement. Cross-reference the datasheet revision date to guarantee access to the most recent electrical characteristics and thermal data.
Select this component when a 1200 V blocking capability and high current handling are required in a standard through-hole form factor. Consider the 195 W power dissipation limit and thermal resistance values for heatsink design. Evaluate the trade-off between the 2.6 V saturation voltage and switching speed relative to the application's efficiency targets.
This part belongs to Microchip's APT series of discrete IGBTs, which utilize Field Stop trench gate technology. The series is designed for general-purpose power switching applications requiring reliable performance and robust construction. The TO-247 package provides a balance of electrical isolation and thermal management for medium-power systems.
Direct substitutes include the APT15GN120SDQ1G, which shares similar electrical specifications but utilizes a D3PAK package instead of TO-247. Verify that the alternative package fits the mechanical constraints of the assembly while maintaining equivalent voltage and current ratings.