ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT PT 600V 56A TO220
- Series：POWER MOS 7®
- Mfr：Microsemi Corporation
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：56 A
- Current - Collector Pulsed (Icm)：65 A
- Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 15A
- Power - Max：250 W
- Switching Energy：130µJ (on), 121µJ (off)
- Input Type：Standard
- Gate Charge：55 nC
- Td (on/off) @ 25°C：8ns/29ns
- Test Condition：400V, 15A, 5Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220 [K]
- Grade：-
- Qualification：-
Download product information
Overview
The APT15GP60KG is a single N-channel Power MOS 7 IGBT manufactured by Microsemi Corporation, utilizing Punch Through technology for optimized high-frequency switching. It features a TO-220 package with a maximum collector-emitter breakdown voltage of 600 V and a continuous collector current rating of 56 A at 25°C case temperature. The device exhibits a typical on-state voltage of 2.7 V at 15 A and 15 V gate drive. Dynamic characteristics include a total gate charge of 55 nC, turn-on energy of 130 µJ, and turn-off energy of 121 µJ under standard test conditions (400 V, 15 A, 5 Ω). It supports an operating junction temperature range from -55°C to 150°C.
Feature Summary
- Punch Through Technology for low conduction loss and ultrafast tail current shutoff
- Optimized for high frequency switchmode power supplies up to 200 kHz operation
- Switching Safe Operating Area (SSOA) rated for reliable performance
Applications
- High frequency switchmode power supplies
- High voltage switching applications requiring fast tail current shutoff
- Inductive switching circuits operating at elevated frequencies
Procurement Notes
Verify the exact ordering suffix against official Microsemi documentation to confirm package variations or specific manufacturing lot requirements. Confirm component availability status as distribution channels may list obsolete inventory. Ensure electrostatic discharge handling procedures are strictly followed during storage and installation due to device sensitivity.
Selection Notes
Select this component when designing circuits requiring a 600V rated IGBT with optimized high-frequency performance. Evaluate thermal management capabilities based on the 250 W total power dissipation limit and the specified junction-to-case thermal resistance. Ensure the gate driver can supply the required 15 V drive voltage while managing the 55 nC gate charge effectively.
Part Context
This part belongs to the POWER MOS 7 series of high-voltage IGBTs developed by Advanced Power Technology, now part of Microsemi. The series focuses on combining low conduction losses with rapid switching speeds, making it suitable for demanding power electronics environments where efficiency and speed are critical design constraints.
Replacement Considerations
Consult official Microsemi cross-reference lists for verified substitutes. Generic replacements must match the 600V rating, TO-220 package dimensions, and comparable dynamic switching energies to ensure circuit compatibility without redesign.
