APT15GP90BDQ1G

$5.15

Description：IGBT PT 900V 43A TO247
Series：POWER MOS 7®

SKU:5e048236f34c Category: Single IGBTs Brand: Microchip Technology

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Product introduction

Product Detailed Parameters

Description：IGBT PT 900V 43A TO247
Series：POWER MOS 7®
Mfr：Microchip Technology
Package：Tube
IGBT Type：PT
Voltage - Collector Emitter Breakdown (Max)：900 V
Current - Collector (Ic) (Max)：43 A
Current - Collector Pulsed (Icm)：60 A
Vce(on) (Max) @ Vge, Ic：3.9V @ 15V, 15A
Power - Max：250 W
Switching Energy：200µJ (off)
Input Type：Standard
Gate Charge：60 nC
Td (on/off) @ 25°C：9ns/33ns
Test Condition：600V, 15A, 4.3Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247 [B]
Grade：-
Qualification：-

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APT15GP90BDQ1G

Overview

The APT15GP90BDQ1G is a single-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Microchip Technology. It utilizes PT MOS 7 Combi technology and is housed in a TO-247 package for through-hole mounting. The device features a maximum collector-emitter voltage (VCEO) of 900 V and a continuous collector current rating of 15 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 3.2 V, a gate-emitter maximum voltage of ±20 V, and a power dissipation capacity of 150 W. The component operates within a junction temperature range of -40°C to +150°C.

Feature Summary

Integrates PT MOS 7 Combi technology for optimized switching performance.
Designed for high-voltage applications with a 900 V blocking capability.
Utilizes a robust TO-247 through-hole package for effective thermal management.

Applications

Industrial motor drives
Switched-mode power supplies
Inverter circuits

Procurement Notes

Verify the specific ordering suffix against official Microchip documentation to ensure correct configuration. Confirm that the requested quantity aligns with standard factory packaging formats. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and traceability before finalizing procurement actions.

Selection Notes

Select this component when a 900 V rated IGBT with a 15 A continuous current capacity is required. Ensure the application design accommodates the specified 3.2 V saturation voltage for appropriate thermal calculations. Verify that the system's gate drive voltage remains within the ±20 V limit to prevent device damage during operation.

Part Context

This component belongs to the APT series of discrete IGBTs from Microchip Technology. It is designed as a replacement or upgrade for legacy devices in medium-power industrial electronics. The TO-247 form factor ensures compatibility with standard heatsinking solutions used in power conversion systems.

Replacement Considerations

Consult official Microchip substitution guides for verified alternatives. Do not assume pin-compatible replacements without verifying electrical parameter alignment and thermal characteristics.