SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The APT15GT60BRDQ1G is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Microchip Technology. It utilizes silicon technology and features a TO-247 through-hole package. The device supports a maximum collector-emitter voltage of 600 V and a continuous collector current of 42 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 2 V, a gate-emitter voltage range of -30 V to 30 V, and a power dissipation rating of 184 W. It operates within a temperature range of -55°C to +150°C junction temperature.
This component is listed as obsolete or end-of-life by the manufacturer. Availability is restricted, and it may not be sold in all regions. Verification of current stock status and alternative sourcing channels is required before procurement planning. Confirm RoHS compliance details directly with authorized distributors.
Select this part for low-to-medium power switching applications requiring high voltage isolation. Ensure the design accommodates the 184 W power dissipation limit and the specific saturation voltage characteristics. Verify that the TO-247 package fits the mechanical constraints and that the driver can support the specified gate voltage range.
The APT15GT60BRDQ1G belongs to the Thunderbolt IGBT family from Microchip Technology. It is a discrete semiconductor device designed for general-purpose power switching. The 'DQ1G' suffix typically indicates specific packaging or environmental compliance variations within the product line.
As the part is obsolete, direct substitutes must be verified against the original specifications: 600V, 42A, TO-247 package, and similar Vce(sat). Consult Microchip's official obsolescence notices for recommended replacement parts.