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APT17N80SC3G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microsemi Corporation. Its product description is MOSFET N-CH 800V 17A D3PAK. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for APT17N80SC3G
- Description：MOSFET N-CH 800V 17A D3PAK
- Series：CoolMOS™
- Mfr：Microsemi Corporation
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：800 V
- Current - Continuous Drain (Id) @ 25°C：17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：290mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id：3.9V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：90 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2250 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：208W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：D3PAK
- Package / Case：TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Single FETs, MOSFETs datasheet and documents for APT17N80SC3G
Single FETs, MOSFETs Overview
The APT17N80SC3G is a Super Junction MOSFET from Microsemi Corporation, utilizing Infineon's COOLMOS technology. It features an 800V drain-source breakdown voltage and a continuous drain current of 17A at 25°C case temperature. The device offers a maximum on-state resistance of 0.29Ω at VGS=10V. Packaged in a TO-247 or D3PAK format, it supports a junction temperature range of -55°C to +150°C with a total power dissipation of 208W.
Single FETs, MOSFETs Feature Summary
- Ultra-low on-resistance for efficient conduction
- Low Miller capacitance and gate charge
- Rated for repetitive avalanche energy
Single FETs, MOSFETs Applications
- High-frequency switching power supplies
- Motor control applications
- Inductive load switching circuits
Single FETs, MOSFETs Procurement Notes
Verify the specific package variant (TO-247 or D3PAK) required for your design, as the datasheet covers both APT17N80BC3 and APT17N80SC3 configurations. Confirm that the ordering suffix matches the physical footprint needed. Ensure electrostatic discharge handling procedures are followed during assembly due to component sensitivity.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring high-voltage blocking capability combined with low conduction losses. The Super Junction architecture provides superior performance compared to standard planar MOSFETs. Consider thermal management requirements given the 208W dissipation rating and ensure gate drive voltages align with the specified threshold characteristics.
Single FETs, MOSFETs Part Context
This part belongs to the COOLMOS family developed by Infineon Technologies AG and distributed by Microsemi. It represents a class of transistors designed for high-efficiency power switching. The product line includes variants with different packaging options to suit various board layout constraints while maintaining consistent electrical performance metrics.
Single FETs, MOSFETs Replacement Considerations
Check pinout compatibility if substituting with other 800V MOSFETs. Verify that alternative devices meet the same RDS(on) and Qg specifications to maintain circuit efficiency. Ensure the replacement package fits the existing thermal interface.
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