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APT17ZTR-G1 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is IC TRANSISTOR HIGH VOLT TO92. Review the specifications below when checking this part for your BOM.
The APT17ZTR-G1 is a single NPN bipolar junction transistor manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in a TO-92-3 through-hole package. The device features a maximum collector-emitter voltage (VCEO) of 450 V and a collector current rating of 800 mA. Power dissipation is rated at 1 W, with an operating temperature range from -55°C to +150°C. The component includes a DC current gain (hFE) ranging from 6 to 40 under specified conditions.
Verify the specific datasheet revision and RoHS compliance status directly with Diodes Incorporated before procurement. Confirm that the TO-92-3 package dimensions match your PCB layout requirements. Ensure the supplier provides valid traceability documentation for this discontinued or end-of-life component variant.
Select this component when high collector-emitter voltage ratings are required in a small through-hole package. Consider the 800 mA continuous current limit and 1 W power dissipation capabilities during thermal design. Verify compatibility with existing circuit biasing networks given the specified hFE range.
This part belongs to the APT series of high-voltage NPN transistors from Diodes Incorporated. These components are designed for general-purpose applications requiring reliable performance in discrete semiconductor products. The series supports various industrial and consumer electronics markets.
Check official Diodes Incorporated substitution guides for compatible high-voltage NPN transistors in the TO-92 package. Verify matching electrical parameters such as VCEO, IC, and package type for direct replacement.
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