APT200GT60JR

Overview

The APT200GT60JR is a single IGBT module manufactured by Microchip Technology, utilizing silicon technology. It features a Fieldstop (FG) architecture within the SOT-227 package. The device supports a maximum collector-emitter voltage of 600 V and a continuous collector current of 100 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.5 V and a power dissipation rating of 340 W. The component operates within a junction temperature range of -55°C to +175°C and utilizes screw mount installation.

Feature Summary

• Fieldstop technology for optimized switching performance
• High thermal stability with extended junction temperature capability
• Robust mechanical design suitable for high-power applications

Applications

• Industrial motor drives
• Uninterruptible power supplies
• Inverter circuits

Procurement Notes

Verify the specific datasheet revision and RoHS compliance status before integration. Confirm that the SOT-227 footprint matches the target PCB or heatsink assembly. Ensure gate drive requirements align with the specified voltage limits. Check for any obsolescence notices from the manufacturer regarding long-term supply availability.

Selection Notes

Select this component for applications requiring 600V blocking capability with moderate current handling in a compact form factor. Compare the 1.5V saturation voltage against system efficiency targets. Evaluate the 340W power dissipation limit against the available thermal management solution. Consider the -55°C to +175°C operating range for environmental suitability.

Part Context

This part belongs to the APT series of discrete IGBTs and modules from Microchip Technology. It represents a legacy product line often used in established industrial designs. The SOT-227 package provides a balance between power density and ease of mounting compared to larger modular formats.