SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
APT20M16LFLLG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 200V 100A TO264. Review the specifications below when checking this part for your BOM.
The APT20M16LFLLG is a single N-Channel enhancement mode Power MOSFET from Microchip Technology, utilizing the Power MOS 7 technology. It features a TO-264 (T-MAX) package and operates with a drain-source breakdown voltage of 200V and a continuous drain current of 100A at 25°C case temperature. The device exhibits a maximum on-state resistance of 0.016Ω at VGS=10V and ID=50A. Total power dissipation reaches 694W at 25°C. Gate threshold voltage is typically 3V, with a total gate charge of 140nC. Operating junction temperature ranges from -55°C to +150°C.
Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm RoHS compliance status via the manufacturer's documentation. Ensure handling procedures account for electrostatic discharge sensitivity during storage and assembly. Validate package dimensions match the TO-264 outline provided in the datasheet before integration.
Select this component when designs require low on-state resistance combined with fast switching characteristics in a T-MAX package. Consider the thermal impedance curves for heat sink sizing based on expected duty cycles. Evaluate gate drive requirements against the specified gate charge and threshold voltage parameters to ensure reliable turn-on and turn-off performance under varying load conditions.
This part belongs to the Advanced Power Technology (APT) Power MOS 7 family, now manufactured by Microchip Technology. The series focuses on high-voltage, low-loss N-Channel enhancement mode MOSFETs. The LFLL suffix indicates the specific TO-264 leaded package variant within the broader product line.
The APT20M16B2FLLG is a documented alternative within the same datasheet offering identical electrical ratings but housed in a T-MAX B2 package. Verify pinout compatibility and mechanical footprint differences before substitution.
The peak diode recovery dv/dt is rated at 8 V/ns.
Yes, the Eon parameter includes the energy associated with the body diode's reverse recovery.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.