APT20M38BVRG

Single FETs, MOSFETs Overview

The APT20M38BVRG is a single N-channel power MOSFET manufactured by Microchip Technology. It utilizes silicon technology and features a TO-247-3 through-hole package. Key electrical parameters include a drain-source breakdown voltage (Vds) of 200 V, a continuous drain current (Id) of 56 A to 67 A depending on thermal conditions, and a maximum on-state resistance (Rds(on)) of 38 mΩ. The device supports a gate-source voltage range of ±30 V with a typical threshold voltage of 4 V. It operates within a temperature range of -55°C to +150°C, offering a power dissipation rating of 300 W to 370 W.

Single FETs, MOSFETs Feature Summary

• Enhancement mode N-channel configuration for efficient switching applications
• Low on-state resistance to minimize conduction losses
• Robust thermal performance suitable for high-power environments

Single FETs, MOSFETs Applications

• Motor control systems
• Power supply circuits
• Industrial automation switches

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'B' against the official Microchip datasheet to confirm pinout and packaging variations. Ensure the ordering quantity aligns with manufacturer tube constraints. Cross-reference the RoHS status and lead-free designation with current regulatory requirements before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when a 200 V rating and low Rds(on) are required for through-hole assembly. Compare the 56 A to 67 A current ratings against system peak loads. Evaluate the TO-247-3 footprint compatibility with existing PCB designs and verify thermal management capabilities meet the 300 W to 370 W dissipation needs.

Single FETs, MOSFETs Part Context

This part belongs to Microchip's discrete power MOSFET portfolio, designed for general-purpose switching. It serves as a replacement for legacy International Rectifier or Vishay components in the same voltage and current class. The TO-247 package provides reliable mounting for industrial-grade applications requiring robust mechanical stability.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes may include parts from the same family with identical pinouts. Verify equivalent Rds(on) and Vgs thresholds when cross-referencing with competitors like Infineon or ON Semiconductor. Ensure thermal resistance values match the original design constraints.