APT24M120L

Single FETs, MOSFETs Overview

The APT24M120L is an N-channel Power MOS 8 series MOSFET manufactured by Microchip Technology. It features a silicon technology base with a TO-264-3 through-hole package. Key electrical parameters include a drain-source breakdown voltage (VDS) of 1.2 kV and a continuous drain current (ID) of 24 A. The device exhibits a maximum on-resistance (RDS(on)) of 500 mΩ at specified conditions, with a gate-source threshold voltage (VGS(th)) of 4 V. Total gate charge (QG) is 260 nC. Operating temperatures range from -55 °C to +150 °C, with a power dissipation rating of 1.04 kW.

Single FETs, MOSFETs Feature Summary

• High-voltage capability with 1.2 kV drain-source breakdown voltage for robust switching applications.
• Enhancement mode N-channel construction utilizing silicon technology for reliable performance.
• Through-hole mounting in a TO-264-3 package designed for high thermal dissipation.
• Extended operating temperature range supporting environments up to +150 °C.

Single FETs, MOSFETs Applications

• Industrial motor control systems
• High-voltage DC-DC converters
• Power supply units requiring isolated switching

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision and ordering suffixes directly with Microchip Technology or authorized distributors to ensure component authenticity. Confirm that the TO-264-3 package dimensions match your PCB footprint requirements. Check RoHS compliance status against current regulatory standards for your target market before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring high voltage isolation and moderate current handling capabilities. Ensure the thermal management solution can handle the 1.04 kW power dissipation rating under worst-case operating conditions. Verify that the gate drive circuitry can effectively manage the 260 nC gate charge to achieve desired switching speeds without excessive losses.

Single FETs, MOSFETs Part Context

This part belongs to the Power MOS 8 family, which represents Microchip's discrete power semiconductor offerings. These components are engineered for general-purpose power switching applications where reliability and high voltage tolerance are critical. The TO-264-3 package provides a balance between electrical performance and mechanical robustness for industrial-grade deployments.

Single FETs, MOSFETs Replacement Considerations

Consult official Microchip cross-reference documentation for verified substitutes. Ensure any replacement maintains identical voltage ratings, current capacity, and package compatibility to preserve circuit integrity and thermal performance characteristics.

Single FETs, MOSFETs FAQ

What is the maximum gate-source voltage rating?

The absolute maximum gate-source voltage is rated at ±30 V.

Is this device available in a surface-mount package?

No, the APT24M120L is specifically packaged in a TO-264-3 through-hole configuration.