APT24M80S

$9.05

Description：MOSFET N-CH 800V 25A D3PAK
Series：POWER MOS 8™
Mfr：Microchip Technology
Package：Bulk

SKU:e8cd3cdb2363 Category: Single FETs, MOSFETs Brand: Microchip Technology

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Product introduction

APT24M80S is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 800V 25A D3PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APT24M80S

Description：MOSFET N-CH 800V 25A D3PAK
Series：POWER MOS 8™
Mfr：Microchip Technology
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：800 V
Current - Continuous Drain (Id) @ 25°C：25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：390mOhm @ 12A, 10V
Vgs(th) (Max) @ Id：5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：150 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：4595 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：625W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：D3PAK
Package / Case：TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

Single FETs, MOSFETs datasheet and documents for APT24M80S

APT24M80S

Single FETs, MOSFETs Overview

The APT24M80S is an N-channel MOSFET from Microchip Technology utilizing MOS 8 technology. It features a maximum drain-source voltage of 800 V and a continuous drain current of 25 A. The device has a maximum on-state resistance of 390 milliohms at 10 V gate drive. It operates within a temperature range of -55°C to +150°C junction temperature. The component is housed in a TO-268 package.

Single FETs, MOSFETs Feature Summary

Utilizes MOS 8 technology for optimized performance
High voltage capability with 800 V breakdown
Low on-state resistance for efficient conduction

Single FETs, MOSFETs Applications

Industrial motor drives
Power supply circuits
Inverter applications

Single FETs, MOSFETs Procurement Notes

Verify the specific package variant, as sources indicate TO-268 or D3PAK configurations. Confirm thermal management requirements for high-power operation. Check manufacturer documentation for exact pinout and mounting specifications before integration into designs.

Single FETs, MOSFETs Selection Notes

Select this component for high-voltage switching applications requiring robust performance. Ensure the gate drive voltage supports the specified on-state resistance characteristics. Consider thermal dissipation capabilities given the power rating and operating temperature range.

Single FETs, MOSFETs Part Context

This part belongs to Microchip's discrete semiconductor portfolio, specifically within the MOSFET category. It is designed for general-purpose high-voltage switching tasks. The MOS 8 technology represents a specific generation of planar trench gate field-stop MOSFETs offered by the manufacturer.