APT25GLQ120JCU2

Overview

The APT25GLQ120JCU2 is a single IGBT module with an integrated Boost SiC Schottky diode, manufactured by Microchip Technology. It utilizes Trench + Field Stop Fast IGBT 4 technology and features an ISOTOP (SOT-227) package for direct heatsink mounting. The collector-emitter breakdown voltage is 1200 V, with a continuous collector current of 45 A at 25°C case temperature. The typical collector-emitter saturation voltage is 2.05 V at 25°C. Maximum power dissipation is 170 W at 25°C case temperature. The junction-to-case thermal resistance is 0.9 °C/W for the IGBT and 1.1 °C/W for the SiC diode. The maximum operating junction temperature is 175°C.

Feature Summary

• Trench + Field Stop Fast IGBT 4 technology providing low voltage drop, low leakage current, and low switching losses.
• Integrated Boost SiC Schottky diode featuring zero reverse recovery, zero forward recovery, and positive temperature coefficient on forward voltage.
• ISOTOP® SOT-227 isolated package enabling direct mounting to a heatsink with very low stray inductance.

Applications

• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction
• Brake switch

Procurement Notes

Verify component authenticity through authorized Microchip Technology distributors or official channels. Confirm RoHS compliance status and check for Product Change Notifications (PCN) prior to procurement. Ensure proper electrostatic discharge handling procedures are followed during storage and assembly, as specified in application note APT0502.

Selection Notes

Select this module for applications requiring high integration and low stray inductance. The positive temperature coefficient of VCEsat facilitates easy paralleling of multiple units. Verify that the required continuous collector current does not exceed 45 A at 25°C case temperature, or derate accordingly for higher temperatures up to 80°C.

Part Context

This component belongs to the APT series of power modules from Microchip Technology. It combines a fast IGBT with a silicon carbide boost diode in a single SOT-227 package. The design targets high-efficiency power conversion systems where compact size and thermal performance are critical requirements.

Replacement Considerations

No publicly confirmed substitute part numbers are available in the provided documentation. Direct replacement requires matching the 1200V rating, 45A current capacity, ISOTOP package dimensions, and electrical characteristics such as VCE(sat) and switching speeds.

FAQ

What is the maximum RMS isolation voltage between any terminal and the case?

The maximum RMS isolation voltage is 2500 V when tested for 1 minute at 50/60 Hz.

Does the integrated SiC diode exhibit reverse recovery charge?

No, the Boost SiC Schottky diode features zero reverse recovery and zero forward recovery.

What is the recommended mounting torque for the terminals?

The recommended mounting torque is 1.5 N.m for 8-32 or 4mm machine screws.