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The APT25GN120BG is a single Field-Stop IGBT manufactured by Microchip Technology. It features a collector-emitter voltage (Vces) of 1200 V and a continuous collector current (Ic) of 67 A at 25°C. The device utilizes a TO-247 [B] through-hole package. Key electrical parameters include a maximum power dissipation of 272 W and a gate-emitter voltage range of ±20 V. The component operates within a temperature range of -55°C to +150°C junction temperature.
Verify the specific suffix 'G' corresponds to the RoHS-compliant version as documented in official Microchip datasheets. Confirm the TO-247 [B] package variant matches the required footprint for PCB design. Ensure the ordering information aligns with the latest product release notes from the manufacturer to avoid discrepancies in technical specifications or environmental compliance status.
Select this component for high-voltage switching applications requiring reliable field-stop IGBT performance. Consider the 1200 V rating and 67 A current capacity against the specific load requirements of the target circuit. Evaluate the thermal characteristics and TO-247 package suitability for the intended heat dissipation strategy. Compare against alternative discrete IGBTs if higher current density or different packaging options are necessary for the system design.
The APT25GN120BG belongs to the APT series of discrete IGBTs from Microchip Technology, formerly known as Microsemi. This series focuses on high-voltage power switching solutions utilizing advanced Field-Stop technology. The component is designed for robust performance in demanding power electronics environments, offering a balance of voltage blocking capability and current handling within a standard through-hole package format.
Consult official Microchip cross-reference documents for verified substitutes. Generic equivalents may differ in switching speed or thermal resistance. Verify pinout compatibility and electrical ratings before substitution.