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Product Detailed Parameters
- Description：IGBT PT MOS 7 SIC COMBI 1200 V 2
- Series：Power MOS 7™
- Mfr：Microchip Technology
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：69 A
- Current - Collector Pulsed (Icm)：90 A
- Vce(on) (Max) @ Vge, Ic：-
- Power - Max：417 W
- Switching Energy：560µJ (on), 440µJ (off)
- Input Type：Standard
- Gate Charge：110 nC
- Td (on/off) @ 25°C：12ns/70ns
- Test Condition：600V, 25A, 5Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The APT25GP120BSC15 is a single-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Microchip Technology. It utilizes Silicon technology and belongs to the POWER MOS 7 family, featuring PT MOS 7 Combi architecture with 1200 V collector-emitter voltage (VCEO). The device supports a continuous collector current of 69 A at 25°C and dissipates up to 417 W. It operates within a junction temperature range of -55°C to +150°C and uses a TO-247-3 through-hole package.
Feature Summary
- Integrates SiC Combi technology for enhanced switching performance
- Utilizes POWER MOS 7 trench gate field-stop architecture
- Designed for high-voltage power switching applications
Applications
- High-frequency inverter circuits
- Motor drive systems
- Uninterruptible power supplies (UPS)
- Switched-mode power supplies (SMPS)
Procurement Notes
Verify component authenticity through authorized Microchip Technology distributors or certified suppliers. Confirm RoHS compliance status via official datasheets. Check for Product Change Notifications (PCN) regarding recent manufacturing updates. Ensure storage conditions meet moisture sensitivity level requirements before assembly.
Selection Notes
Select this component for designs requiring 1200 V blocking capability with moderate current handling. Evaluate thermal management needs against the 417 W power dissipation rating. Compare switching characteristics with alternative IGBTs if higher frequency operation is required. Verify package compatibility with existing PCB footprints for TO-247-3 mounting.
Part Context
This part belongs to Microchip's APT series of discrete power semiconductors. It complements other devices in the POWER MOS 7 lineup, offering variations in current ratings and packaging options. The series targets industrial and consumer power electronics markets requiring reliable high-voltage switching solutions.
Replacement Considerations
Direct substitutes include APT25GP120BDQ1G from the same manufacturer. Cross-brand replacements require matching VCEO, Ic, and package dimensions. Verify electrical parameters and thermal resistance values before implementation.
