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Product Detailed Parameters
- Description：IGBT PT 900V 72A TO247
- Series：POWER MOS 7®
- Mfr：Microchip Technology
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：900 V
- Current - Collector (Ic) (Max)：72 A
- Current - Collector Pulsed (Icm)：110 A
- Vce(on) (Max) @ Vge, Ic：3.9V @ 15V, 25A
- Power - Max：417 W
- Switching Energy：370µJ (off)
- Input Type：Standard
- Gate Charge：110 nC
- Td (on/off) @ 25°C：13ns/55ns
- Test Condition：600V, 25A, 5Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247 [B]
- Grade：-
- Qualification：-
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Overview
The APT25GP90BG is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by Microchip Technology. It utilizes Power MOS 7 technology and features a Planar Trench structure. The device is rated for a maximum collector-emitter voltage of 900 V and a continuous collector current of 25 A at 25°C. It is housed in a TO-247 package designed for through-hole mounting. The component operates within a junction temperature range of -55°C to +150°C and complies with RoHS standards.
Feature Summary
- Power MOS 7 technology integration for optimized switching performance
- Planar trench design for low conduction losses
- High thermal stability suitable for demanding environments
Applications
- Industrial motor drives
- Switched-mode power supplies
- Inverter circuits
Procurement Notes
Verify the manufacturer part number against official Microchip Technology documentation to ensure authenticity. Confirm that the specific ordering suffix matches the required package and compliance specifications. Cross-reference datasheet revisions to confirm electrical characteristics remain consistent with the intended application requirements before finalizing procurement.
Selection Notes
Select this component when a 900 V blocking capability and 25 A continuous current rating are required in a TO-247 form factor. Ensure the gate drive circuitry supports the input capacitance and charge characteristics defined in the official datasheet. Verify that the thermal management solution can maintain the junction temperature within the specified operating limits under maximum load conditions.
Part Context
This IGBT belongs to the APT series from Microchip Technology, which incorporates Power MOS 7 technology. The series is characterized by planar trench designs aimed at reducing conduction losses while maintaining robust switching capabilities. The TO-247 package provides a standard footprint for high-power discrete semiconductor applications requiring reliable thermal dissipation.
Replacement Considerations
Consult official Microchip Technology substitution guides or equivalent product selection tools for verified alternatives. Do not assume functional compatibility based solely on pinout or voltage ratings without verifying internal cell architecture and switching parameters.
