APT25GR120SD15

$6.82

Description：IGBT NPT 1200V 75A D3PAK
Series：-

SKU:cd41e6cb9289 Category: Single IGBTs Brand: Microchip Technology

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Product introduction

Product Detailed Parameters

Description：IGBT NPT 1200V 75A D3PAK
Series：-
Mfr：Microchip Technology
Package：Tube
IGBT Type：NPT
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：75 A
Current - Collector Pulsed (Icm)：100 A
Vce(on) (Max) @ Vge, Ic：3.2V @ 15V, 25A
Power - Max：521 W
Switching Energy：742µJ (on), 427µJ (off)
Input Type：Standard
Gate Charge：203 nC
Td (on/off) @ 25°C：16ns/122ns
Test Condition：600V, 25A, 4.3Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Supplier Device Package：D3PAK
Grade：-
Qualification：-

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APT25GR120SD15

Overview

The APT25GR120SD15 is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by Microchip Technology. It utilizes NPT technology and the POWER MOS 8® platform. The device features a collector-emitter voltage of 1200 V and a continuous collector current of 25 A. Maximum power dissipation is rated at 521 W. It is housed in a D3PAK package, also identified as TO-268.

Feature Summary

Incorporates NPT technology for robust high-voltage performance
Built on the POWER MOS 8® platform for optimized switching characteristics

Applications

High-voltage power conversion systems
High-power industrial applications
General purpose switching circuits requiring 1200 V isolation

Procurement Notes

Verify the specific datasheet version and ordering suffix to ensure compatibility with required thermal and electrical specifications. Confirm package dimensions against PCB footprint requirements prior to integration. Cross-reference official Microchip documentation for any recent product change notifications or pinout updates.

Selection Notes

Select this component when a single IGBT configuration is required for moderate current levels up to 25 A. Ensure the application design accommodates the 521 W power dissipation rating and the thermal constraints of the D3PAK package. Validate that the 1200 V blocking capability meets the system's maximum voltage stress.

Part Context

This part belongs to Microchip's IGBT portfolio, designed for high-quality solutions in high-voltage and high-power scenarios. It represents a discrete solution within the broader range of power semiconductor devices offered by the manufacturer for various industrial and commercial power electronics needs.

Replacement Considerations

Direct substitutes are not explicitly confirmed in public documentation. Evaluate alternatives based on matching 1200 V rating, 25 A current capacity, and compatible D3PAK/TO-268 packaging. Verify equivalent switching speed and saturation voltage characteristics before substitution.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

We ship via DHL, FedEx, UPS, and TNT. If you prefer a specific logistics provider, we can ship using your designated carrier.

Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.