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Product Detailed Parameters
- Description：IGBT NPT 1200V 54A TO247
- Series：Thunderbolt IGBT®
- Mfr：Microchip Technology
- Package：Tube
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：54 A
- Current - Collector Pulsed (Icm)：75 A
- Vce(on) (Max) @ Vge, Ic：3.7V @ 15V, 25A
- Power - Max：347 W
- Switching Energy：930µJ (on), 720µJ (off)
- Input Type：Standard
- Gate Charge：170 nC
- Td (on/off) @ 25°C：14ns/150ns
- Test Condition：800V, 25A, 5Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247 [B]
- Grade：-
- Qualification：-
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Overview
The APT25GT120BRDQ2G is a fast recovery diode manufactured by Microchip Technology, designed for power supply applications. It utilizes an As-based material composition and features a DIP package configuration. The component operates within a specified temperature range suitable for industrial environments. Official documentation identifies it as a rectifier diode with specific electrical characteristics including forward current, reverse voltage, and leakage parameters, though exact numerical values are not provided in the available source data.
Feature Summary
- Fast recovery performance optimized for high-frequency switching applications
- Robust construction using arsenide-based semiconductor materials
- Designed specifically for dedicated power supply circuit requirements
Applications
- General purpose power supply rectification
- Industrial electrical equipment circuits
- High-frequency switching power converters
Procurement Notes
Verify the manufacturer part number against official Microchip Technology databases to ensure authenticity. Confirm the DIP package type and arsenide material specification match project requirements. Check for RoHS compliance status through authorized distributors. Validate the batch code and manufacturing date against supply chain records to ensure component integrity and traceability.
Selection Notes
Select this component when fast recovery characteristics are required for power supply designs. Ensure the DIP package fits the PCB layout constraints. Verify that the arsenide material properties align with thermal and electrical performance needs. Compare specifications with alternative rectifier diodes if higher current ratings or different packaging options are necessary for the specific application.
Part Context
This device belongs to the Microchip Technology discrete diode portfolio, specifically targeting power management solutions. It complements other rectifier components in the lineup by offering fast recovery capabilities. The product supports various industrial and commercial power conversion systems requiring reliable rectification performance.
Replacement Considerations
Consult official Microchip Technology substitution guides for compatible alternatives. Verify pin compatibility and electrical parameter equivalence before replacing. Consider package dimensions and mounting requirements when selecting substitute parts.
