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APT26F120B2 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 1200V 27A T-MAX. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for APT26F120B2
- Description：MOSFET N-CH 1200V 27A T-MAX
- Series：-
- Mfr：Microchip Technology
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：1200 V
- Current - Continuous Drain (Id) @ 25°C：27A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：650mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id：5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs：300 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：9670 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1135W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：T-MAX™
- Package / Case：TO-247-3 Variant
Single FETs, MOSFETs datasheet and documents for APT26F120B2
Single FETs, MOSFETs Overview
The APT26F120B2 is a single N-channel Power MOSFET from the POWER MOS 8™ family, manufactured by Microchip Technology. It utilizes T-MAX™ [B2] through-hole packaging (TO-247-3) and silicon technology. Key electrical parameters include a drain-source voltage of 1200 V, continuous drain current of 27 A, and maximum on-state resistance of 580 mΩ at 10 V gate drive. The device supports a power dissipation of 1135 W at case temperature, with an operating junction temperature range of -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- High-voltage capability rated for 1200 V drain-source breakdown
- Optimized low on-state resistance for efficient conduction
- Robust thermal performance supporting high power dissipation in TO-247-3 packages
Single FETs, MOSFETs Applications
- High-voltage switching circuits
- Industrial motor control systems
- Power supply topologies requiring fast recovery characteristics
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix B2 corresponds to the T-MAX package variant when sourcing. Confirm datasheet revisions match design requirements. Ensure thermal management solutions align with the 1135 W dissipation rating under intended operating conditions. Cross-reference pinouts with legacy components if replacing existing designs.
Single FETs, MOSFETs Selection Notes
Select this component for applications demanding high voltage isolation and moderate current handling. The 580 mΩ resistance offers a balance between conduction loss and cost. Consider the through-hole mounting style for mechanical stability in industrial environments. Evaluate gate charge requirements against driver capabilities for optimal switching performance.
Single FETs, MOSFETs Part Context
This device belongs to the POWER MOS 8™ series, representing an evolution in trench gate technology. It succeeds earlier generations like the APT series, offering improved ruggedness and switching speed. The T-MAX package provides superior thermal conductivity compared to standard TO-247 variants, facilitating higher power density in compact designs.
Single FETs, MOSFETs Replacement Considerations
Direct substitutes may include other 1200V N-channel MOSFETs in TO-247-3 packages with comparable Rds(on) and current ratings. Verify pin compatibility and thermal resistance values before substitution.
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