APT27GA90BD15

$4.93

Description：IGBT PT 900V 48A TO247
Series：-

SKU:bbf515aaa902 Category: Single IGBTs Brand: Microchip Technology

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Product introduction

Product Detailed Parameters

Description：IGBT PT 900V 48A TO247
Series：-
Mfr：Microchip Technology
Package：Tube
IGBT Type：PT
Voltage - Collector Emitter Breakdown (Max)：900 V
Current - Collector (Ic) (Max)：48 A
Current - Collector Pulsed (Icm)：79 A
Vce(on) (Max) @ Vge, Ic：3.1V @ 15V, 14A
Power - Max：223 W
Switching Energy：413µJ (on), 287µJ (off)
Input Type：Standard
Gate Charge：62 nC
Td (on/off) @ 25°C：9ns/98ns
Test Condition：600V, 14A, 10Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247 [B]
Grade：-
Qualification：-

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APT27GA90BD15

Overview

The APT27GA90BD15 is a single IGBT from the Power MOS 8™ Punch-Through family, manufactured by Microchip Technology. It features a TO-247-3 package and operates with a maximum collector-emitter voltage of 900 V. The device supports a continuous collector current of 48 A at 25°C and has a typical saturation voltage of 2.5 V. It is co-packaged with a DQ fast recovery diode. The component handles a power dissipation of 223 W and functions within a temperature range of -55°C to +150°C.

Feature Summary

Power MOS 8™ Punch-Through technology for high efficiency
Co-packaged with high-speed DQ anti-parallel diode
Short circuit safe operating area capability

Applications

High-frequency Switch Mode Power Supplies (SMPS)
Induction heating systems
Arc welding equipment

Procurement Notes

Verify the specific datasheet version and RoHS compliance status directly with Microchip Technology before finalizing procurement decisions. Confirm that the TO-247-3 package dimensions match the target PCB footprint requirements. Ensure thermal management solutions are adequate for the specified 223 W power dissipation rating under actual operating conditions.

Selection Notes

Select this component when designing circuits requiring 900 V blocking capability combined with low switching losses in the 25 kHz to 50 kHz range. The integrated DQ diode simplifies design for hard-switched topologies. Compare against NPT or Field Stop variants if different conduction loss profiles or higher frequency operation above 50 kHz is required for the specific application load.

Part Context

This part belongs to the Power MOS 8™ IGBT series, which utilizes Punch-Through technology optimized for high-efficiency performance. The series covers voltage ratings from 600 V to 1200 V. The APT27GA90BD15 specifically targets applications needing robust switching characteristics and integrated freewheeling diode functionality in a standard through-hole package.