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APT29F100L is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 1000V 30A TO264. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for APT29F100L
- Description：MOSFET N-CH 1000V 30A TO264
- Series：-
- Mfr：Microchip Technology
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：1000 V
- Current - Continuous Drain (Id) @ 25°C：30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：460mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id：5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs：260 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：8500 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1040W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-264
- Package / Case：TO-264-3, TO-264AA
Single FETs, MOSFETs datasheet and documents for APT29F100L
Single FETs, MOSFETs Overview
The APT29F100L is an N-Channel Power MOSFET from Microchip Technology, utilizing POWER MOS 8 technology. It features a 1000 V drain-source breakdown voltage and a continuous drain current of 30 A at case temperature. The device offers a maximum power dissipation of 1040 W at case temperature and a gate charge of 260 nC. It operates within a temperature range of -55°C to +150°C and is housed in a TO-264 through-hole package.
Single FETs, MOSFETs Feature Summary
- Utilizes POWER MOS 8 technology for high-voltage performance
- Designed for robust switching applications with fast recovery characteristics
- Supports screw mount installation via the TO-264 package
Single FETs, MOSFETs Applications
- High-voltage DC-DC converters
- Induction heating systems
- Uninterruptible power supplies (UPS)
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix 'L' against the manufacturer's latest datasheet to confirm package outline updates or pinout variations. Ensure thermal management solutions align with the 1040 W dissipation rating at the specified case temperature. Confirm RoHS compliance status through official documentation before integration into regulated assemblies.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring 1000 V blocking capability with moderate current handling. The TO-264 package facilitates efficient heat sinking compared to smaller surface-mount options. Evaluate the 260 nC gate charge against driver capabilities to optimize switching speed and minimize losses in high-frequency operation scenarios.
Single FETs, MOSFETs Part Context
This part belongs to Microchip's discrete single FET MOSFET portfolio. It is distinct from module variants like the APT19F100J, which uses a SOT-227 package. The APT29F100L represents a standalone solution for applications where discrete component flexibility and standard through-hole mounting are preferred over integrated module architectures.
Single FETs, MOSFETs Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Cross-referencing requires consulting official Microchip obsolescence notices or equivalent technical specification matrices from other manufacturers.
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