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Product Detailed Parameters
- Description:DIODE MODULE GP 1200V 30A ISOTOP
- Series:-
- Mfr:Microchip Technology
- Package:Tube
- Diode Configuration:2 Independent
- Technology:Standard
- Voltage - DC Reverse (Vr) (Max):1200 V
- Current - Average Rectified (Io) (per Diode):30A
- Voltage - Forward (Vf) (Max) @ If:2.5 V @ 30 A
- Speed:Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):370 ns
- Current - Reverse Leakage @ Vr:250 µA @ 1200 V
- Operating Temperature - Junction:-
- Mounting Type:Chassis Mount
- Package / Case:SOT-227-4, miniBLOC
- Supplier Device Package:ISOTOP®
- Grade:-
- Qualification:-
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Overview
The APT2X31D120J is a fast recovery epitaxial diode (FRED) module manufactured by Microchip Technology. It features a dual independent configuration housed in a SOT-227B (miniBLOC) package with screw mounting. The device supports a maximum repetitive peak reverse voltage of 1200 V and an average forward current of 30 A per diode. Key electrical parameters include a forward voltage of approximately 1.8 V at rated current, a maximum surge current of 540 A, and a reverse leakage current of 1.2 mA at 1200 V. Operating temperatures range from -55°C to +175°C.
Feature Summary
- Dual independent diode structure for flexible circuit integration
- Fast recovery epitaxial design optimized for high-frequency switching
- High thermal performance via direct baseplate cooling
- Double-insulated construction for enhanced safety
Applications
- High-voltage DC power supplies
- Induction heating systems
- Uninterruptible power supply (UPS) inverters
- Motor drive rectifiers
Procurement Notes
Verify the specific suffix 'J' corresponds to the standard tube packaging configuration as documented in official Microchip datasheets. Confirm that the SOT-227B footprint matches the target PCB or chassis layout requirements. Ensure thermal interface materials are compatible with the copper baseplate for effective heat dissipation during operation.
Selection Notes
Select this component when a dual independent topology is required within a single insulated package. The 1200 V rating suits medium-to-high voltage applications, while the 30 A current capacity addresses moderate power levels. Consider the fast recovery characteristics for efficiency in high-frequency environments compared to standard recovery diodes.
Part Context
This part belongs to the ISOTOP series of double-insulated diode modules. These modules are designed to replace discrete diode assemblies, reducing board space and assembly complexity. The SOT-227B form factor is a standard industry footprint for high-power semiconductor devices, facilitating compatibility with existing heatsink designs.
Replacement Considerations
DCG130X1200NA by IXYS is listed as a similar alternative. Verify pinout compatibility and thermal resistance specifications before substitution. Note that the DCG130X1200NA utilizes Silicon Carbide technology, which may differ in switching behavior from the FRED technology of the APT2X31D120J.
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