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Product Detailed Parameters
- Description:DIODE MOD SIC 600V 40A SOT-227
- Series:-
- Mfr:Microsemi Corporation
- Package:Bulk
- Diode Configuration:2 Independent
- Technology:SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max):600 V
- Current - Average Rectified (Io) (per Diode):40A
- Voltage - Forward (Vf) (Max) @ If:1.8 V @ 40 A
- Speed:No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr):0 ns
- Current - Reverse Leakage @ Vr:800 µA @ 600 V
- Operating Temperature - Junction:-
- Mounting Type:Chassis Mount
- Package / Case:SOT-227-4, miniBLOC
- Supplier Device Package:SOT-227
- Grade:-
- Qualification:-
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Overview
The APT2X40DC60J is a Silicon Carbide (SiC) Schottky diode array manufactured by Microsemi Corporation. It features two independent diodes with a maximum DC reverse voltage of 600V and an average forward current rating of 40A per diode. The component utilizes SiC technology for superior thermal performance and switching efficiency compared to traditional silicon devices.
Feature Summary
- Utilizes Silicon Carbide (SiC) Schottky technology for enhanced thermal stability and high-temperature operation capabilities.
- Features two independent diode configurations within a single package, allowing for flexible circuit design options.
Applications
- High-frequency power supply designs
- Industrial motor drive systems
- Uninterruptible power supplies (UPS)
Procurement Notes
Verify the specific suffix and marking codes on the physical component against official Microsemi documentation to confirm authenticity. Check for obsolescence notices or last-time buy notifications as this part may be discontinued. Ensure storage conditions comply with manufacturer guidelines to prevent degradation before installation.
Selection Notes
Select this component when high-temperature reliability and fast switching speeds are required in power conversion applications. Compare the 600V reverse voltage and 40A current ratings against system requirements. Consider the thermal management needs associated with SiC devices versus standard silicon alternatives.
Part Context
This device belongs to the APT series of power semiconductors from Microsemi, focusing on high-performance rectification solutions. The SiC Schottky architecture offers lower forward voltage drop and negligible reverse recovery charge, contributing to reduced switching losses in demanding electronic environments.
Replacement Considerations
Public confirmed substitute part numbers: APT2X41DC60J
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