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APT30F50S is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 500V 30A D3PAK. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for APT30F50S
- Description：MOSFET N-CH 500V 30A D3PAK
- Series：POWER MOS 8™
- Mfr：Microchip Technology
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：500 V
- Current - Continuous Drain (Id) @ 25°C：30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：190mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id：5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：115 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：4525 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：415W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：D3PAK
- Package / Case：TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Single FETs, MOSFETs datasheet and documents for APT30F50S
Single FETs, MOSFETs Overview
The APT30F50S is a single N-channel Power MOS 8™ Fast Recovery Epitaxial Diode (FREDFET) transistor manufactured by Microchip Technology. It utilizes silicon technology and is housed in a D3PAK-3 surface-mount package. Key electrical specifications include a drain-source breakdown voltage of 500 V and a continuous drain current of 30 A at case temperature. The device features a maximum on-resistance of 190 mΩ at 10 V gate drive, with a gate charge of 115 nC. It operates within a junction temperature range of -55°C to +150°C and supports a power dissipation of 415 W.
Single FETs, MOSFETs Feature Summary
- Integrates a fast recovery epitaxial diode monolithically with the MOSFET channel for efficient switching performance.
- Utilizes Power MOS 8™ technology to achieve low conduction losses and optimized switching characteristics.
- Designed for surface-mount installation in compact power electronic applications.
Single FETs, MOSFETs Applications
- High-frequency DC-DC converters
- Uninterruptible power supply (UPS) systems
- Motor control drives
Single FETs, MOSFETs Procurement Notes
Verify the specific manufacturer designation, as historical records may reference Microsemi or International Rectifier prior to corporate acquisitions. Confirm the package type matches the required PCB footprint and ensure thermal management solutions align with the specified power dissipation limits. Check for any product change notifications regarding pinout or material composition updates before finalizing procurement.
Single FETs, MOSFETs Selection Notes
Select this component when a high-voltage, medium-current switching solution with integrated body diode characteristics is required. The 500 V rating suits industrial and commercial power supplies. Ensure the driving circuit can provide the necessary gate voltage to minimize on-resistance while staying within the absolute maximum ratings for thermal and electrical stress during operation.
Single FETs, MOSFETs Part Context
This part belongs to the Power MOS 8™ family of discrete semiconductors, representing an evolution in trench gate technology. It serves as a standalone switching element within Microchip's broader portfolio of power management components, designed to replace older generation MOSFETs in applications demanding improved efficiency and faster recovery times.
Single FETs, MOSFETs Replacement Considerations
Direct replacements must match the 500 V / 30 A specification and D3PAK-3 package. Verify that alternative parts from other manufacturers maintain compatible gate charge and on-resistance values to ensure circuit stability without redesigning the gate drive network.
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