APT30GN60BDQ2G

$3.43

Description：IGBT TRENCH FS 600V 63A TO247
Series：-

SKU:f7139a22fabe Category: Single IGBTs Brand: Microchip Technology

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 600V 63A TO247
Series：-
Mfr：Microchip Technology
Package：Tube
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：63 A
Current - Collector Pulsed (Icm)：90 A
Vce(on) (Max) @ Vge, Ic：1.9V @ 15V, 30A
Power - Max：203 W
Switching Energy：525µJ (on), 700µJ (off)
Input Type：Standard
Gate Charge：165 nC
Td (on/off) @ 25°C：12ns/155ns
Test Condition：400V, 30A, 4.3Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247 [B]
Grade：-
Qualification：-

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APT30GN60BDQ2G

Overview

The APT30GN60BDQ2G is a single IGBT from Microchip Technology, utilizing Field Stop and Trench Gate technologies. It features a collector-emitter voltage of 600 V and a continuous collector current of 30 A at 25°C. The device operates within a junction temperature range of -55°C to +175°C and is housed in a TO-247 package.

Feature Summary

Field Stop and Trench Gate technology for low conduction loss
Slightly positive VCE(on) temperature coefficient for easy paralleling
Low gate charge simplifies gate drive design

Applications

Welding equipment
Inductive heating systems
Solar inverters
Motor drives

Procurement Notes

Verify the specific suffix 'DQ2G' against official datasheets to confirm RoHS compliance and terminal finish details. Ensure the ordering information matches the exact electrical characteristics required for the target application circuit design.

Selection Notes

Select this component for low-frequency applications requiring minimal conduction losses. The tight parameter distribution supports parallel operation. Verify thermal management requirements for the TO-247 package under expected load conditions.

Part Context

This part belongs to the APT series of high-voltage power discretes. It shares technological foundations with variants like the APT30GN60B and APT30GN60S, focusing on efficiency improvements through advanced silicon structures.