APT30GN60BG

APT30GN60BG

$2.60
  • Description:IGBT TRENCH FS 600V 63A TO247
  • Series:-

SKU:cfa82651e70c Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT TRENCH FS 600V 63A TO247
  • Series:-
  • Mfr:Microchip Technology
  • Package:Tube
  • IGBT Type:Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):63 A
  • Current - Collector Pulsed (Icm):90 A
  • Vce(on) (Max) @ Vge, Ic:1.9V @ 15V, 30A
  • Power - Max:203 W
  • Switching Energy:525µJ (on), 700µJ (off)
  • Input Type:Standard
  • Gate Charge:165 nC
  • Td (on/off) @ 25°C:12ns/155ns
  • Test Condition:400V, 30A, 4.3Ohm, 15V
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247 [B]
  • Grade:-
  • Qualification:-

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APT30GN60BG

Overview

The APT30GN60BG is a single silicon Insulated Gate Bipolar Transistor (IGBT) manufactured by Microchip Technology. It utilizes Field Stop and Trench Gate technologies to achieve ultra-low saturation voltage, making it suitable for low-frequency applications requiring minimal conduction loss. The device features a TO-247 package with through-hole mounting. Key electrical ratings include a maximum collector-emitter voltage of 600 V, a continuous collector current of 63 A at 25°C, and a power dissipation capacity of 203 W. The gate-emitter voltage range is -30 V to +30 V, and the junction temperature can operate between -55°C and +175°C.

Feature Summary

  • Field Stop and Trench Gate technology for reduced conduction losses
  • Slightly positive VCE(on) temperature coefficient facilitating easy paralleling
  • Low gate charge to simplify drive design and minimize switching losses

Applications

  • Welding equipment
  • Inductive heating systems
  • Solar inverters
  • Motor drives
  • Uninterruptible Power Supplies (UPS)

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to confirm RoHS compliance and terminal finish specifications. Ensure that the procurement documentation matches the exact part number variant required for the application. Cross-reference the component marking with the official Microchip Technology identification standards to prevent counterfeit substitution during acquisition.

Selection Notes

Select this component for designs prioritizing low conduction loss in low-frequency switching environments. The TO-247 package supports high thermal performance and robust mechanical mounting. Consider the 6 µs short-circuit capability when designing protection circuits. Verify that the gate drive voltage limits align with the specified ±30 V rating to ensure reliable operation within the thermal constraints of the target system.

Part Context

This IGBT belongs to the APT series from Microchip Technology, which integrates advanced trench gate and field stop architectures. The 'G' suffix typically indicates RoHS-compliant packaging with lead-free terminals. It serves as a discrete power switch alternative to modules in medium-power applications, offering a balance between conduction efficiency and switching simplicity for industrial and renewable energy systems.

Replacement Considerations

Direct replacements must match the 600V/30A class, TO-247 package, and Field Stop/Trench Gate topology. Verify equivalent VCE(sat) and short-circuit ruggedness. Consult Microchip Technology for validated cross-references or updated revisions of the APT30GN60BG series.

APT30GN60BGAPT30GN60BG
$2.60
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