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The APT30GP60B2DLG is a single Insulated Gate Bipolar Transistor (IGBT) from the POWER MOS 7 series, manufactured by Microsemi. It features a Planar Technology (PT) structure with a maximum collector-emitter voltage of 600 V and a continuous collector current of 30 A at 25°C. The device utilizes a TO-247 package for through-hole mounting. Key electrical parameters include a maximum gate-emitter voltage of ±20 V and a power dissipation rating of 280 W. The component operates within a junction temperature range of -55°C to +150°C.
Verify the specific suffix 'DLG' against official Microchip/Microsemi documentation to confirm terminal finish and RoHS compliance status. Ensure the ordering information matches the exact datasheet revision for the APT30GP60B2 series. Confirm package type and pinout compatibility before integration into designs.
Select this component for applications requiring a 600V rated single IGBT with moderate current handling capabilities. The TO-247 package facilitates effective thermal management for power dissipation up to 280 W. Consider the 30 A continuous current rating relative to the operating temperature derating curves provided in the official datasheet.
This part belongs to the APT30GP60 family of IGBTs, which are designed for general purpose switching applications. The series utilizes Power MOS 7 technology to optimize the trade-off between conduction and switching losses. Variants within this family typically share similar electrical characteristics but may differ in packaging or environmental compliance markings.
Direct replacements should be sought within the APT30GP60 series or equivalent 600V/30A single IGBTs from other manufacturers. Verify that substitute components match the TO-247 footprint and have comparable Vce(sat) and switching energy values.