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The APT30GT60BRG is a single NPT (Non-Punch-Through) IGBT transistor manufactured by Microchip Technology. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 30 A at 25°C. The device has a maximum power dissipation of 184 W and operates within a junction temperature range of -55°C to +150°C. Packaged in a TO-247 [B] through-hole housing, it exhibits a typical saturated collector-emitter voltage of 2.2 V at 30 A with a gate drive of 15 V.
Verify the specific datasheet revision and ordering suffix when sourcing components. Confirm that the TO-247 package dimensions match the target PCB footprint requirements. Ensure the supplier provides traceability documentation consistent with Microchip Technology standards for quality assurance purposes.
Select this component for designs requiring a 600 V rating with moderate current handling capabilities. Compare the 2.2 V saturation voltage against system efficiency targets. Evaluate thermal management solutions based on the 184 W power dissipation limit and the specified junction temperature range for the intended operating environment.
This part belongs to the Thunderbolt series of IGBTs from Microchip Technology. It serves as a discrete switching element within power electronics systems. The TO-247 package facilitates through-hole mounting for robust mechanical connections in industrial hardware configurations.
Consult official Microchip cross-reference lists for verified substitutes. Verify pinout compatibility and electrical parameter equivalence before implementing any alternative component in existing circuit designs.