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APT30M30JLL is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 300V 88A ISOTOP. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for APT30M30JLL
- Description：MOSFET N-CH 300V 88A ISOTOP
- Series：POWER MOS 7®
- Mfr：Microchip Technology
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：300 V
- Current - Continuous Drain (Id) @ 25°C：88A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：30mOhm @ 44A, 10V
- Vgs(th) (Max) @ Id：5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs：140 nC @ 10 V
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：7030 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：Chassis Mount
- Supplier Device Package：ISOTOP®
- Package / Case：SOT-227-4, miniBLOC
Single FETs, MOSFETs datasheet and documents for APT30M30JLL
Single FETs, MOSFETs Overview
The APT30M30JLL is a single N-channel Power MOSFET module manufactured by Microchip Technology. It utilizes Silicon technology and features the POWER MOS 7 ISOTOP construction within an SOT-227-4 package designed for screw mounting. The device supports a continuous drain current of 88 A with a maximum on-resistance of 30 mOhms. It operates with a gate-source voltage range of -30 V to +30 V and handles up to 520 W of power dissipation. The component functions reliably between -55°C and +150°C.
Single FETs, MOSFETs Feature Summary
- POWER MOS 7 ISOTOP construction for high-performance switching
- Single N-channel configuration in a robust SOT-227-4 package
- Designed for screw mount installation
Single FETs, MOSFETs Applications
- High-frequency power conversion systems
- Motor drive circuits
- DC-DC converter topologies
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix and revision level against the official Microchip Technology datasheet before procurement. Confirm that the SOT-227-4 package dimensions and thermal characteristics align with your heatsink design requirements. Ensure the gate drive voltage limits are respected during integration to prevent device damage.
Single FETs, MOSFETs Selection Notes
Select this component when a low on-resistance and high current capability are required in a single-chip module format. The POWER MOS 7 technology offers improved switching performance compared to older generations. Consider the thermal management needs associated with the 520 W power dissipation rating and the specific mechanical constraints of the screw-mount SOT-227-4 package.
Single FETs, MOSFETs Part Context
This part belongs to the Microchip Technology discrete and power modules category, specifically under MOSFETs. It is part of the broader portfolio of silicon-based power semiconductors designed for industrial and commercial applications. The module integrates the die into a standardized package to simplify assembly and improve thermal reliability in power electronics designs.
Single FETs, MOSFETs Replacement Considerations
Consult the official Microchip Technology documentation for verified substitute part numbers. Cross-reference electrical parameters such as Rds(on), Id, and Vds to ensure compatibility. Verify package pinout and mechanical dimensions match the existing PCB layout and thermal interface.
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