APT30M36LLLG

Single FETs, MOSFETs Overview

The APT30M36LLLG is a Power MOS 7 N-Channel enhancement mode power MOSFET manufactured by Microchip Technology. It utilizes the T-MAX or TO-264 package and operates with a drain-source breakdown voltage of 300V and a continuous drain current of 84A at 25°C case temperature. The device features a maximum on-state resistance of 0.036Ω at VGS=10V and ID=42A, alongside a total gate charge of 115nC. It supports an operating junction temperature range from -55°C to +150°C and provides a total power dissipation capacity of 568W under specified thermal conditions.

Single FETs, MOSFETs Feature Summary

• Power MOS 7 technology combines low conduction losses with fast switching speeds via a patented metal gate structure.
• Optimized for easier driving through reduced input capacitance, Miller capacitance, and total gate charge.
• High power dissipation capability supported by robust thermal characteristics in the T-MAX/TO-264 package.

Single FETs, MOSFETs Applications

• Switch mode power supplies
• Motor control circuits
• DC-DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation to confirm exact package type and electrical tolerances. Confirm RoHS compliance status and lead times directly with the manufacturer or authorized distributors before placing orders. Ensure proper electrostatic discharge handling procedures are followed during storage and assembly.

Single FETs, MOSFETs Selection Notes

Select this component for high-voltage applications requiring efficient switching and low conduction losses. Evaluate thermal management requirements based on the 0.22°C/W junction-to-case thermal resistance. Consider the 300V rating and 84A current capacity when designing circuits for industrial or automotive environments.

Single FETs, MOSFETs Part Context

This part belongs to the APT30M series of Power MOS 7 devices, designed for high-performance power switching. The LLL suffix typically denotes the TO-264 package variant within the product line. These components are engineered to address both conduction and switching losses simultaneously.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution lists for verified equivalents. Cross-reference pinouts and thermal resistance values carefully when considering alternative packages like TO-247 variants.

Single FETs, MOSFETs FAQ

What is the maximum repetitive avalanche energy rating?

The single pulse avalanche energy rating is 2500 mJ, tested starting at a junction temperature of +25°C with an inductance of 0.71mH and peak current of 84A.

How does the device handle reverse recovery?

The internal body diode has a typical reverse recovery time of 530ns and a reverse recovery charge of 11.5µC when tested at IS = -84A and di/dt = 100A/µs.