APT30SCD120S

Overview

The APT30SCD120S is a zero recovery silicon carbide Schottky diode rated for 1200V maximum DC reverse voltage and 30A maximum forward current. It features a low forward voltage of 1.8V at 30A and 25°C, with a maximum reverse leakage current of 600μA at 1200V. The device operates within a junction temperature range of -55°C to 150°C and utilizes a TO-247 package.

Feature Summary

• Zero reverse recovery time (trr) eliminates switching losses and ringing patterns.
• Low forward voltage reduces conduction losses in high-efficiency designs.
• Low leakage current ensures robust performance across the operating temperature range.

Applications

• Anti-parallel diode in switchmode power supplies
• Inverter circuits
• Power factor correction (PFC)

Procurement Notes

Verify the specific suffix 'S' against official Microsemi documentation to confirm it denotes the TO-247 package variant rather than the D3PAK surface mount option. Ensure the procurement order explicitly matches the required thermal and mechanical specifications provided in the datasheet.

Selection Notes

Select this component for applications requiring minimal switching losses due to its zero reverse recovery characteristic. Evaluate the thermal resistance and power dissipation limits relative to the expected case temperatures to ensure reliable operation under continuous load conditions.

Part Context

This silicon carbide Schottky diode belongs to the APT30SCD series designed for high-reliability systems. It serves as an alternative to traditional silicon rectifiers by offering superior switching performance and reduced snubber requirements in power electronics applications.

Replacement Considerations

APT30SCD120B