APT33GF120LRDQ2G

$10.81

Description：IGBT NPT 1200V 64A TO264
Series：-

SKU:14f80f426026 Category: Single IGBTs Brand: Microchip Technology

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Product introduction

Product Detailed Parameters

Description：IGBT NPT 1200V 64A TO264
Series：-
Mfr：Microchip Technology
Package：Tube
IGBT Type：NPT
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：64 A
Current - Collector Pulsed (Icm)：75 A
Vce(on) (Max) @ Vge, Ic：3V @ 15V, 25A
Power - Max：357 W
Switching Energy：1.315mJ (on), 1.515mJ (off)
Input Type：Standard
Gate Charge：170 nC
Td (on/off) @ 25°C：14ns/185ns
Test Condition：800V, 25A, 4.3Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-264-3, TO-264AA
Supplier Device Package：TO-264 [L]
Grade：-
Qualification：-

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APT33GF120LRDQ2G

Overview

The APT33GF120LRD2G is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Microchip Technology. It utilizes Non-Punch Through (NPT) technology to deliver robust performance in high-power applications. The device features a collector-emitter voltage rating of 1200V and a continuous collector current capacity of 64A at 25°C. With a power dissipation rating of 357W, it is housed in a 3-pin TO-264 tube package. The gate-emitter leakage current is specified at 120 nA.

Feature Summary

Utilizes Non-Punch Through (NPT) technology for reliable high-voltage blocking capabilities.

Applications

High-power industrial motor drives
Power conversion systems
Inverter circuits

Procurement Notes

Verify the component status carefully before procurement as some sources indicate this product may no longer be manufactured. Confirm availability through authorized distributors or official Microchip channels. Ensure that the specific suffix matches the required specifications, as ordering variations can exist. Check for any applicable tariff statuses if shipping to restricted regions.

Selection Notes

Select this IGBT for applications requiring high voltage isolation and significant current handling within a standard TO-264 footprint. Consider the thermal management requirements associated with its 357W power dissipation rating. Ensure the drive circuitry supports the gate characteristics of this NPT technology device for optimal switching performance.

Part Context

This component belongs to the discrete IGBT transistor category from Microchip Technology. It is designed for demanding power electronics environments where high voltage and current ratings are critical. The TO-264 package provides a balance between power handling and mounting flexibility for various industrial and commercial power supply designs.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Due to potential manufacturing discontinuation indicated by some sources, verify compatibility with alternative components through official Microchip technical support or authorized distributor cross-reference tools.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

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Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

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Mode of Transportation

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Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.