APT35GN120BG

$7.20

Description：IGBT NPT FS 1200V 94A TO247
Series：-

SKU:7a2f6b4b729f Category: Single IGBTs Brand: Microchip Technology

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Product introduction

Product Detailed Parameters

Description：IGBT NPT FS 1200V 94A TO247
Series：-
Mfr：Microchip Technology
Package：Tube
IGBT Type：NPT, Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：94 A
Current - Collector Pulsed (Icm)：105 A
Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 35A
Power - Max：379 W
Switching Energy：2.315mJ (off)
Input Type：Standard
Gate Charge：220 nC
Td (on/off) @ 25°C：24ns/300ns
Test Condition：800V, 35A, 2.2Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247 [B]
Grade：-
Qualification：-

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APT35GN120BG

Overview

The APT35GN120BG is a single NPT Trench Field Stop IGBT manufactured by Microchip Technology. It features a collector-emitter breakdown voltage of 1200 V and a continuous collector current of 94 A at 25°C. The device exhibits a collector-emitter saturation voltage of 1.7 V and supports a power dissipation of 379 W. Operating within a temperature range of -55°C to +150°C, it utilizes a TO-247-3 through-hole package with a maximum gate-emitter voltage of ±30 V.

Feature Summary

Utilizes NPT Trench Field Stop technology for optimized switching performance
Provides high current handling capability with 94 A continuous collector current
Features robust thermal management supporting 379 W power dissipation

Applications

Industrial motor drives
Uninterruptible power supplies (UPS)
High-frequency welding equipment

Procurement Notes

Verify the specific suffix against official Microchip documentation to confirm exact electrical characteristics and pinout configuration. Ensure the procurement channel provides valid traceability for the TO-247-3 package. Confirm RoHS compliance status directly from the manufacturer's latest release notes before integration into production designs.

Selection Notes

Select this component when a single IGBT requires 1200 V blocking capability and high current density in a standard through-hole form factor. The NPT structure offers favorable trade-offs between conduction loss and switching speed. Evaluate thermal resistance requirements against the 379 W dissipation rating to ensure adequate heatsinking for the intended duty cycle.

Part Context

This part belongs to Microchip's discrete IGBT transistor lineup, specifically designed for medium-power applications. It complements other variants in the series that may offer different current ratings or packaging options. The TO-247-3 package is widely recognized for its mechanical stability and ease of mounting in industrial power electronics assemblies.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material. Consult Microchip Technology for direct cross-reference recommendations based on specific application constraints.