APT35GP120B2D2G

$16.39

Description：IGBT PT 1200V 96A TMAX
Series：POWER MOS 7®

SKU:5a2b531b4114 Category: Single IGBTs Brand: Microchip Technology

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Product introduction

Product Detailed Parameters

Description：IGBT PT 1200V 96A TMAX
Series：POWER MOS 7®
Mfr：Microchip Technology
Package：Tube
IGBT Type：PT
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：96 A
Current - Collector Pulsed (Icm)：140 A
Vce(on) (Max) @ Vge, Ic：3.9V @ 15V, 35A
Power - Max：540 W
Switching Energy：1mJ (on), 1.185mJ (off)
Input Type：Standard
Gate Charge：150 nC
Td (on/off) @ 25°C：14ns/99ns
Test Condition：800V, 35A, 5Ohm, 15V
Reverse Recovery Time (trr)：85 ns
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3 Variant
Supplier Device Package：T-MAX™ [B2]
Grade：-
Qualification：-

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APT35GP120B2D2G

Overview

The APT35GP120B2D2 is a POWER MOS 7 IGBT with an integrated ultrafast soft recovery anti-parallel diode, housed in the T-Max B2 package. It features a 1200V collector-emitter voltage rating and a continuous collector current of 96A at 25°C case temperature. The device exhibits a typical on-state voltage of 2.9V at 35A and 25°C. Total gate charge is typically 150nC. Thermal resistance from junction to case is 0.23°C/W for the IGBT and 0.90°C/W for the diode. Maximum power dissipation is 540W at 25°C, with an operating junction temperature range of -55°C to +150°C.

Feature Summary

Integrates a high-voltage IGBT with an ultrafast soft recovery anti-parallel diode in a single component.
Optimized for high-frequency switching applications using Punch Through Technology.
Features low conduction loss and low gate charge characteristics.
Includes reverse bias safe operating area (RBSOA) ratings.

Applications

High frequency switchmode power supplies
High voltage switching circuits
Inductive load switching

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm pinout configuration and package variant. Ensure that the requested part number matches the exact electrical specifications required for the target application circuit design.

Selection Notes

Select this component when a combined IGBT and freewheeling diode solution is required within a TO-247 form factor. Evaluate thermal management requirements based on the specified junction-to-case thermal resistances and maximum power dissipation limits under expected operating conditions.

Part Context

This device belongs to the Advanced Power Technology (APT) POWER MOS 7 family, now manufactured by Microchip Technology. It utilizes punch-through technology to optimize performance for high-frequency operation while maintaining robust voltage blocking capabilities suitable for industrial power electronics.

Replacement Considerations

Check datasheets for alternative IGBTs with similar 1200V ratings and comparable saturation voltages. Verify mechanical footprint compatibility with the T-Max B2 package outline before substituting any other discrete components.