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Product Detailed Parameters
- Description：IGBT PT 1200V 96A
- Series：POWER MOS 7®
- Mfr：Microchip Technology
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：96 A
- Current - Collector Pulsed (Icm)：140 A
- Vce(on) (Max) @ Vge, Ic：3.9V @ 15V, 35A
- Power - Max：543 W
- Switching Energy：750µJ (on), 680µJ (off)
- Input Type：Standard
- Gate Charge：150 nC
- Td (on/off) @ 25°C：16ns/95ns
- Test Condition：600V, 35A, 4.3Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3 Variant
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The APT35GP120B2DQ2G is a silicon Insulated Gate Bipolar Transistor (IGBT) manufactured by Microchip Technology. It features a PT MOS 7 Combi structure and is housed in a TO-247 MAX package with three leads for through-hole mounting. The device supports a collector-emitter voltage of 1200 V and a continuous collector current of 35 A. The maximum gate-emitter voltage ratings are -20 V and +20 V. This component is designed for high-power switching applications requiring robust performance within the specified thermal limits.
Feature Summary
- Combi technology integrates IGBT and Fast Recovery Diode in a single module
- PT MOS 7 structure optimizes switching speed and conduction losses
- TO-247 MAX package provides enhanced thermal dissipation capabilities
Applications
- Industrial motor drives
- Uninterruptible power supplies
- High-frequency welding equipment
Procurement Notes
Verify the specific suffix DQ2G against official Microchip documentation to confirm pinout compatibility and packaging details. Ensure the procurement channel sources components directly from authorized distributors to guarantee authenticity. Cross-reference the datasheet revision date to validate parameter accuracy before integration into design specifications.
Selection Notes
Select this component when a 1200 V rating and 35 A continuous current capacity are required in a TO-247 MAX footprint. Consider the Combi configuration if a complementary fast recovery diode is needed alongside the IGBT switch. Evaluate thermal management requirements based on the 543 W power dissipation capability found in similar family members, though specific values for this variant must be confirmed in the official datasheet.
Part Context
This part belongs to the APT series of power transistors from Microchip Technology, formerly known as Advanced Power Technology. The series is characterized by high-voltage silicon IGBTs designed for demanding power electronics applications. The TO-247 MAX package is a standard form factor for medium-to-high power modules, offering superior heat transfer compared to standard TO-247 packages.
Replacement Considerations
The APT35GP120BG is a related single IGBT device in the same voltage and current class but lacks the integrated diode. Verify pin compatibility and thermal resistance differences before substitution. No other direct substitutes are publicly confirmed for this specific Combi variant.
