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The Microchip APT35GP120JDQ2 is a single IGBT module utilizing PT MOS 7 technology. It features a 1200 V collector-emitter voltage rating and a continuous collector current of 45 A at 25°C. The device has a maximum power dissipation of 329 W and operates within a junction temperature range of -55°C to +150°C. Packaged in SOT-227 with screw mount installation, it includes an integrated anti-parallel diode.
This component belongs to the APT35GP series of single IGBT modules from Microchip Technology. It shares the same electrical ratings and core technology as other variants in the family but utilizes the SOT-227 package configuration instead of TO-247 or ISOTOP formats.
Verify pinout compatibility and thermal resistance values when substituting. Ensure the replacement part supports the required 1200V blocking voltage and 45A current handling capabilities for the specific application.