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Product Detailed Parameters
- Description：IGBT MOD 1200V 55A 260W SOT227
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- IGBT Type：Trench Field Stop
- Configuration：Single
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 35A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：ISOTOP
- Supplier Device Package：SOT-227
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：55 A
- Power - Max：260 W
- Current - Collector Cutoff (Max)：5 mA
- Input Capacitance (Cies) @ Vce：2.53 nF @ 25 V
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Overview
The APT35GT120JU3 is a single IGBT module manufactured by Microchip Technology, utilizing silicon technology. It features a maximum collector-emitter voltage (VCEO) of 1.2 kV and a continuous collector current of 55 A at 25°C. The device exhibits a collector-emitter saturation voltage of 1.7 V and a power dissipation rating of 260 W. It operates within a temperature range of -55°C to +150°C. The component is housed in an ISOTOP-4 package with surface mount installation style. Maximum gate-emitter voltage is specified at 20 V, with a gate-emitter leakage current of 500 nA.
Feature Summary
- Single configuration IGBT module designed for high-voltage power switching applications
- ISOTOP-4 package provides enhanced thermal performance and electrical isolation
- Low saturation voltage contributes to reduced conduction losses
Applications
- Industrial motor drives
- Uninterruptible power supplies
- High-frequency inverters
Procurement Notes
Verify the specific suffix JU3 against official Microchip documentation to confirm pinout and thermal interface specifications. Ensure compatibility with existing PCB footprints and mounting hardware. Confirm RoHS compliance status through the manufacturer's latest datasheet or product change notifications before finalizing procurement orders.
Selection Notes
Select this component when a single-switch solution with 1.2 kV blocking capability is required. The 55 A current rating suits moderate power levels. Consider the ISOTOP-4 package for its compact form factor and superior heat dissipation compared to traditional modules. Evaluate thermal management requirements based on the 260 W power dissipation limit under expected operating conditions.
Part Context
This part belongs to Microchip's IGBT module portfolio, specifically the PM-IGBT-TFS-SOT227 series. It represents a discrete power semiconductor solution intended for efficient energy conversion. The module integrates a single IGBT chip optimized for switching speed and thermal stability within a standardized industrial package format.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Cross-referencing requires consulting official Microchip replacement guides or equivalent technical specifications from other manufacturers.
