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Product Detailed Parameters
- Description：IGBT PT 600V 65A TO247
- Series：POWER MOS 8™
- Mfr：Microchip Technology
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：65 A
- Current - Collector Pulsed (Icm)：109 A
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 20A
- Power - Max：290 W
- Switching Energy：307µJ (on), 254µJ (off)
- Input Type：Standard
- Gate Charge：18 nC
- Td (on/off) @ 25°C：16ns/122ns
- Test Condition：400V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247 [B]
- Grade：-
- Qualification：-
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Overview
The APT36GA60BD15 is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by Microchip Technology. It utilizes Silicon technology and belongs to the POWER MOS 8™ series with PT MOS 8 Combi architecture. The device features a TO-247 [B] through-hole package. Key electrical specifications include a maximum collector-emitter voltage of 600 V and a continuous collector current of 65 A at 25°C. The saturation voltage is specified at 2 V, with a maximum power dissipation of 290 W. The operating temperature range extends from -55°C to +150°C junction temperature.
Feature Summary
- Integrates PT MOS 8 Combi technology for optimized switching performance
- Designed for high-voltage applications with 600 V blocking capability
- Utilizes TO-247 through-hole packaging for robust thermal management
Applications
- Industrial motor drives
- Switched-mode power supplies
- Inverter circuits
Procurement Notes
Verify component authenticity through authorized Microchip distributors or certified suppliers. Confirm lot traceability and RoHS compliance status prior to acquisition. Note that this specific part number may have limited availability or discontinuation status; validate current production lifecycle and lead times directly with the manufacturer before finalizing procurement plans.
Selection Notes
Select this component for designs requiring a 600 V rated IGBT with 65 A continuous current capacity in a TO-247 package. Ensure gate drive circuitry supports the standard input type and ±30 V gate-emitter voltage limits. Verify thermal management solutions can handle the 290 W power dissipation rating within the specified -55°C to +150°C operating temperature range.
Part Context
This device is part of the APT36GA60 family, which includes variants like APT36GA60B. While sharing core electrical characteristics such as voltage and current ratings, suffixes often denote specific packaging, tape-and-reel options, or minor manufacturing revisions. Always consult the official datasheet to confirm functional equivalence between different suffixes within the same base model number.
Replacement Considerations
APT36GA60B is a documented variant within the same product family. Verify pinout compatibility and exact parameter tolerances against the original design requirements before substitution.
