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The APT40GF120JRD is a single IGBT module manufactured by Microchip Technology, utilizing Si technology. It features an NPT Low Frequency Combi configuration with a collector-emitter maximum voltage (VCEO) of 1.2 kV and a continuous collector current of 80 A at 25°C. The device has a collector-emitter saturation voltage of 3.2 V and a gate-emitter leakage current of 100 nA. Power dissipation is rated at 347 W. It operates within a temperature range of -55°C to +150°C and uses an SOT-227-4 package with screw mount installation.
Verify the specific suffix against official documentation, as variations like JRDQ2 or JRDQ4 exist with different electrical characteristics. Confirm RoHS compliance status via the manufacturer's datasheet before integration. Ensure the ordering part number matches the required package type and mounting style for your design.
Select this component for low-frequency applications requiring a combined IGBT and freewheeling diode solution. Compare the 80 A continuous current rating against peak load requirements. Verify that the SOT-227-4 package dimensions fit the thermal management strategy. Check if the NPT technology aligns with the switching frequency constraints of the target circuit.
This part belongs to the Advanced Power Technology (APT) line acquired by Microchip Technology. It is distinct from higher-current variants like the APT60GF120JRD or medium-frequency models. The 'Combi' designation indicates the integrated diode structure, simplifying circuit design compared to discrete setups.
Direct replacements include APT40GF120JRDQ2, which shares similar specifications but may have different packaging or suffix codes. Cross-reference with APT60GF120JRD for higher current needs, though pinouts and thermal characteristics must be verified.